Datasheet > 3DD13002D-HF

3DD13002D-HF

更新时间： 2024-01-03 21:12:56

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描述
NPN Transistors

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中文翻译

获取价格

数据手册

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3DD13002D-HF 数据手册

SMD Type

Transistors

NPN Transistors

3DD13002-HF

1.70 0.1

■ Features

● Collector Current Capability IC=1A

● Collector Emitter Voltage V^CEO=400V

● Power Switching Applications

0.42 0.1

0.46 0.1

● Pb−Free Package May be Available.

The G−Suffix Denotes a Pb−Free Lead Finish

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

600

400

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

0.5

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

600

400

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector- emitter cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 1 mA， I = 0

= 100μA， I = 0

E= 0

ICBO

ICEO

EBO

CB= 600 V , I

CE= 400 V , I

= 0

100

0.5

1.1

E= 0

^EB= 7V , IC=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=200 mA, I

=40mA

=200 mA, I

hFE(1)

CE= 10V, I

= 200mA

= 0.25mA

DC current gain

hFE(2)

Fall time

=1A, IB1=-IB2=0.2A

0.5

2.5

Storage time

Transition frequency

^CC=100V

^CE= 10V, I

C= 100mA,f=1MHz

MHz

■ Classification of hfe(1)

Type

Range

Type

3DD13002A-HF 3DD13002B-HF 3DD13002C-HF 3DD13002D-HF 3DD13002E-HF 3DD13002F-HF

10-15

15-20

20-25

25-30

35-35

35-40

13002A

13002B

13002C

13002D

13002E

13002F

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