SMD Type
Transistors
NPN Transistors
3DD13002
1.70 0.1
■ Features
● Collector Current Capability IC=1A
● Collector Emitter Voltage VCEO=400V
● Power Switching Applications
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
600
400
6
Unit
V
VCBO
VCEO
VEBO
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
1
A
P
C
0.5
150
W
T
J
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
600
400
6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA, I
Ic= 1 mA, I = 0
= 100μA, I = 0
E= 0
B
I
E
C
ICBO
ICEO
I
EBO
V
V
V
CB= 600 V , I
CE= 400 V , I
E
= 0
100
100
100
0.5
1.1
40
uA
V
E= 0
EB= 7V , IC=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=200 mA, I
B
=40mA
=40mA
V
C
=200 mA, I
B
hFE(1)
V
V
CE= 10V, I
CE= 10V, I
C
= 200mA
= 0.25mA
10
5
DC current gain
hFE(2)
C
Fall time
t
f
I
C
=1A, IB1=-IB2=0.2A
0.5
2.5
uS
Storage time
Transition frequency
t
s
V
V
CC=100V
f
T
CE= 10V, I
C= 100mA,f=1MHz
5
MHz
■ Classification of hfe(1)
Type
3DD13002A
3DD13002B
15-20
3DD13002C
20-25
3DD13002D
25-30
3DD13002E
35-35
3DD13002F
35-40
Range
Marking
10-15
13002A
13002B
13002C
13002D
13002E
13002F
1
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