3DD13002

更新时间： 2024-01-07 17:39:08

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描述
TRANSISTOR (NPN)

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数据手册

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3DD13002 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

3DD13002/ 3DD13002B TRANSISTOR (NPN)

TO-92

FEATURE

Power dissipation

1. EMITTER

2. COLLECTOR

3. BASE

P_CM:

900

mW (Tamb=25℃)

Collector current

I_CM:

3DD13002:

1 2 3

3DD13002B: 0.8

Collector-base voltage

V_(BR)CBO:

600

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test conditions

Ic=100µA, I_E=0

Ic= 1mA, I_B=0

MIN

600

400

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E= 100µA, I_C=0

V_CB= 600V, I_E=0

100

µA

I_EBO

V_EB= 6V, I_C=0

Emitter cut-off current

h_FE(1)

V_CE= 10V, I_C= 200 mA

V_CE= 10V, I_C= 10 mA

I_C=200mA, I_B= 40 mA

I_C=200mA, I_B=40 mA

h_FE(2)

V_CE(sat)

V_BE(sat)

0.5

1.1

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE=10V, Ic=100mA

f =1MHz

f_T

MHz

Transition frequency

t_f

0.5

2.5

µs

Fall time

I_C=1A, I_B1=-I_B2=0.2A

V_CC=100V

t_s

Storage time

CLASSIFICATION OF h^FE

(1)

9-15

15-20

20-25

25-30

30-35

35-40

Range

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