Alca te l 1916 LMM
12800 p s/ n m WDM 2.5 Gb it/ s d ig ita l La se r Mod ule
with in te g ra te d e le ctro-a b sorp tion Mod ula tor
•
•
•
Wavelength selection according to ITU-T G.692
Industry-standard 14-pin butterfly package
High frequency butterfly package with
50 Ω RF impedance
Low drive voltage (≤ 2 Vpp)
InGaAsP monolithically integrated DFB laser and
modulator chip
De scrip tion
This Alcatel 1916 LMM contains an Alcatel
DFB laser with monolithically integrated
electro-absorption modulator (ILM). This
chip provides much lower dispersion
penalties than a directly modulated DFB,
without the complexity of LiNbO3 external
modulators. The Alcatel 1916 LMM is
optimized for ultra long-haul transmission
systems using non-dispersion shifted and
optical fiber amplifiers.
•
•
•
Internal optical isolator
Ap p lica tion s
•
STM-16 and OC-48 ultra long-haul
transmission systems
Terminals for submarine transmission systems
Digital WDM CATV transmission
•
•
Fe a ture s
•
Very low dispersion penalty over 750 km
of fiber for 2.5 Gbit/s operation
Op tica l ch a ra cte ristics
Pa ra m e te r
Threshold current
Operating current
Sym b .
Con d ition s
Min
5
60
0
Typ ica l
17
Ma x
35
80
Un its
mA
mA
dBm
V
nm
nm
°C
I
CW, V = 0 V
th
bias
Iop
PAVE
CW, V = 0 V
bias
Optical output power
Laser forward voltage
Emission wavelength
∆(emitted-target) wavelength
Laser chip temperature range for tunability
Modulator bias voltage
Modulator drive voltage
Dynamic extinction ratio
Side mode suppression
Cut off frequency
Iop, Vmod, [1]
V
CW, Iop, V = 0 V
2
F
bias
See table 1
λm
∆λe
Tλ
See [3]
See [3]
See [1]
See [1]
See [1]
- 0.1
20
- 1
+ 0.1
30
0
V
V
V
bias
Vmod
DER
SMSR
S21
S11
∆s
2
10
35
4
dB
dB
GHz
dB
dB
dB
@ Iop
- 3 dB
DC to 3 GHz
See [1], [2], [3]
RF return loss
Dispersion penalty
Tracking error
10
2
0.5
Tsubmount = 25 °C, Tcase = 65 °C
If = 100 mA, Q = 10 log [P(65 °C)/P(25 °C)]
TR
- 0.5
0.2
Rise time / Fall time
Wavelength drift vs Tcase
Monitor diode current
Dark current
Tr/Tf
∆λ/∆Tc
Im
See [1], [2], 10%, 90%
140
0.5
1.5
ps
pm/°C
mA
µA
0.2
0.5
Iop, VM = - 5 V
Id
0.1
∆T= 45 °C, I = 100 mA, T = 65 °C, V = - 1 V
TEC current
I
t
1.3
A
op
C
bias
∆T= 45 °C, I = 100 mA, T = 65 °C, V = - 1 V
TEC voltage
V
t
2.5
V
op
C
bias
Thermistor resistance
R
TH
9.5
10.5
KΩ
Notes :
All limits start of life Tcase = 25 °C, Tsubmount = 20 °C to 30 °C, Vr = - 5 V, unless otherwise stated.
[1] BER= 10-10; 2.488 Gbit/s modulation; 223-1 PRBS; NZR line code; DER ≥10dB
[2] 7200 ps/nm dispersion, assuming fiber with an average dispersion of 18 ps/nm/km
[3] 12800 ps/nm dispersion, assuming fiber with an average dispersionof 18ps/nm/km
[4] Tsubmount = Tλ. Tλis chip temperature required to meet target wavelength (see table 1)
Ab solute m a xim um ra tin g s
Pa ra m e te rs
Operating case temperature
Storage temperature
Laser forward current
Laser reverse voltage
Min
0
-40
Ma x
65
85
150
2
Un it
°C
°C
mA
V
Modulator forward voltage
Modulator reverse voltage
Photodiode forward current
Photodiode reverse voltage
TEC Voltage
1
5
1
20
2.8
1.4
500
2000
10
V
V
mA
V
V
A
V
V
s
TEC Current
ESD applied on modulator
ESD applied on laser [1]
Lead soldering time (at 260°C)
Packing Mounting Screw Torque
0.2
nm
[1] Human body model Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
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