极性: | PNP | Collector-emitter breakdown voltage: | 400 |
Collector Current - Continuous: | 0.2 | DC current gain - Min: | 10 |
DC current gain - Max: | 40 | Transition frequency: | 8 |
Package: | SOT-89 | Storage Temperature Range: | -55-150 |
class: | Transistors |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
3CD14001_13 | BL Galaxy Electrical |
获取价格 |
High Voltage Fast Switching PNP Power Transistor | |
3CD2051 | FOSHAN |
获取价格 |
TO-126F | |
3CD284RE | OHMITE |
获取价格 |
Fixed Resistor, Wire Wound, 3W, 284ohm, 450V, 0.5% +/-Tol, -30,30ppm/Cel, | |
3CD49R3E | OHMITE |
获取价格 |
Fixed Resistor, Wire Wound, 3W, 49.3ohm, 450V, 0.5% +/-Tol, -30,30ppm/Cel, | |
3CD6D | ISC |
获取价格 |
Silicon PNP Power Transistors | |
3CD816RE | OHMITE |
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Fixed Resistor, Wire Wound, 3W, 816ohm, 450V, 0.5% +/-Tol, -30,30ppm/Cel, | |
3CD834 | ETC |
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DIODE | |
3CD834A | ETC |
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3CD834A 硅PNP型低频放大管壳额定双极型晶体管 =2SB834 | |
3CD83R5E | OHMITE |
获取价格 |
Fixed Resistor, Wire Wound, 3W, 83.5ohm, 450V, 0.5% +/-Tol, -30,30ppm/Cel, | |
3CD845RE | OHMITE |
获取价格 |
Fixed Resistor, Wire Wound, 3W, 845ohm, 450V, 0.5% +/-Tol, -30,30ppm/Cel, |