Datasheet > 3CA1943O

3CA1943O

更新时间： 2024-01-12 05:18:01

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	115K
描述
Transistor

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技术参数
数据手册

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3CA1943O 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

3CA1943O 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-3P Plastic-Encapsulate Transistors

TO – 3P

3CA1943 TRANSISTOR (PNP)

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER

High Breakdown Voltage

General Purpose Switching and Amplification

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-120

-5

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-15

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

T_j

℃/W

℃

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

-120

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-100µA,I_E=0

I_C=-50mA,I_B=0

I_E=-100µA,I_C=0

V_CB=-120V,I_E=0

V_EB=-5V,I_C=0

-5

μA

Emitter cut-off current

I_EBO

h_FE(1)

V_CE=-5V, I_C=-1A

V_CE=-5V, I_C=-7A

I_C=-8A,I_B=-800mA

VCE=-5V,IC=-1A

160

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Transition frequency

*Pulse test

V_CE(sat)

f_T

-3

MHz

CLASSIFICATION OF h_{FE (1)}

RANK

RANGE

55-110

80-160

A,Dec,2010

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