3CA1837

更新时间： 2024-11-12 07:40:31

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
2页	107K
描述
TRANSISTOR (PNP)

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中文翻译

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数据手册

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3CA1837 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220F Plastic-Encapsulate Transistors

TO-220F

3CA1837 TRANSISTOR (PNP)

FEATURES

. High Transition Frequency : f_T=70MH_Z(Typ)

. Complementary to 3DA4793

1. BASE

2. COLLECTOR

3. EMITTE

. Collector Power Dissipation

P_CM: 2W (Tamb=25℃)

20 W (Tcase=25℃)

MAXIMUM RATINGS* T_A=25℃ unless otherwise noted

Symbol

Parameter

Value

-230

Units

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-230

-5

Collector Current -Continuous

Base Current

-1000

-100

150

℃

I_B

T_J

Junction Junction

T_stg

Storage Junction

-55-150

℃

*These ratings are limiting values above which the serviceability of any semiconductor device may be

impaired.

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-230

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOIc=-100µA , I_E=0

V_(BR)CEOIc=-1mA, I_B=0

V_(BR)EBOI_E=-100µA, I_C=0

I_CBO

I_EBO

h_FE

V_CB=-230V, I_E=0

-10

µA

Emitter cut-off current

V_EB=-5V, I_C=0

DC current gain

V_CE=-5V, I_C=-100mA

I_C=-500mA, I_B=-50mA

V_CE=-10V, I_C=-100mA

100

320

-1.5

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

MHz

中文翻译

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