3SK166

更新时间： 2024-02-09 22:14:11

品牌	Logo	应用领域
索尼 - SONY		栅
页数	文件大小	规格书
5页	75K
描述
GaAs N-channel Dual Gate MES FET

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技术参数
数据手册

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3SK166 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G4
针数：	4	Reach Compliance Code：	unknown
HTS代码：	8541.21.00.75	风险等级：	5.84
Is Samacsys：	N	其他特性：	LOW NOISE
配置：	SINGLE	最大漏极电流 (ID)：	0.08 A
FET 技术：	METAL SEMICONDUCTOR	最大反馈电容 (Crss)：	0.04 pF
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-G4
元件数量：	1	端子数量：	4
工作模式：	DUAL GATE, DEPLETION MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最小功率增益 (Gp)：	18 dB
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	GALLIUM ARSENIDE
Base Number Matches：	1

3SK166 数据手册

3SK166A

GaAs N-channel Dual Gate MES FET

For the availability of this product, please contact the sales office.

Description

The 3SK166A is an N-channel dual gate GaAs

MES FET for UHF band low-noise amplification. The

circuit matching is easier to be made for all UHF

band, resulting in the excellent performance, due to

the optimal design of input impedance.

Features

• Low voltage operation

• Low noise: NF = 1.2dB (typ.) at 800MHz

• High gain: Ga = 20dB (typ) at 800MHz

• High stability

Application

UHF band amplifier, oscillator

Structure

GaAs N-channel dual-gate metal semiconductor field-effect transistor

Absolute Maximum Ratings (Ta = 25°C)

• Drain to source voltage

• Gate 1 to source voltage

• Gate 2 to source voltage

• Drain current

VDSX

VG1S

VG2S

–6

°C

• Allowable power dissipation

• Channel temperature

• Storage temperature

150

Tch

Tstg

150

–55 to +150

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

E96Y11-PS

12 3 4 5

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3SK166A	SONY	GaAs N-channel Dual Gate MES FET	获取价格
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