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385LP4E PDF预览

385LP4E

更新时间: 2024-10-30 07:39:11
品牌 Logo 应用领域
HITTITE 缓冲放大器
页数 文件大小 规格书
6页 240K
描述
MMIC VCO w/ BUFFER AMPLIFIER, 2.25 - 2.5 GHz

385LP4E 数据手册

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HMC385LP4 / 385LP4E  
v02.0705  
MMIC VCO w/ BUFFER  
AMPLIFIER, 2.25 - 2.5 GHz  
Typical Applications  
Features  
Low noise MMIC VCO w/Buffer Amplifier for:  
• Wireless Infrastructure  
• Industrial Controls  
Pout: +4.5 dBm  
Phase Noise: -115 dBc/Hz @100 KHz  
No External Resonator Needed  
Single Supply: 3V @ 35 mA  
QFN Leadless SMT Package, 16 mm2  
• Test Equipment  
• Military  
Functional Diagram  
General Description  
The HMC385LP4 & HMC385LP4E are GaAs InGaP  
Heterojunction Bipolar Transistor (HBT) MMIC VCOs  
with integrated resonators, negative resistance  
devices, varactor diodes, and buffer amplifiers.  
Covering 2.25 to 2.5 GHz, the VCO’s phase noise  
performance is excellent over temperature, shock,  
vibration and process due to the oscillator’s monolithic  
structure. Power output is 4.5 dBm typical from a  
single supply of 3V @ 35mA. The voltage controlled  
oscillator is packaged in a low cost leadless QFN  
4x4 mm surface mount package.  
11  
Electrical Specifications, TA = +25° C, Vcc = +3V  
Parameter  
Frequency Range  
Min.  
1.5  
0
Typ.  
2.25 - 2.5  
4.5  
Max.  
Units  
GHz  
dBm  
dBc/Hz  
V
Power Output  
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output  
Tune Voltage (Vtune)  
-115  
10  
10  
Supply Current (Icc) (Vcc = +3.0V)  
Tune Port Leakage Current  
35  
9
mA  
μA  
Output Return Loss  
dB  
Harmonics  
2nd  
3rd  
-7  
-23  
dBc  
dBc  
Pulling (into a 2.0:1 VSWR)  
Pushing @ Vtune= +5V  
Frequency Drift Rate  
2.0  
-2  
MHz pp  
MHz/V  
MHz/°C  
0.25  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 14  

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