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373LP3E PDF预览

373LP3E

更新时间: 2024-09-13 02:58:47
品牌 Logo 应用领域
HITTITE 放大器
页数 文件大小 规格书
8页 415K
描述
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz

373LP3E 数据手册

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HMC373LP3 / 373LP3E  
v02.0605  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz  
5
Typical Applications  
The HMC373LP3 / HMC373LP3E is ideal for  
basestation receivers:  
Features  
Noise Figure: 0.9 dB  
+35 dBm Output IP3  
• GSM, GPRS & EDGE  
• CDMA & W-CDMA  
Gain: 14 dB  
Low Loss LNA Bypass Path  
Single Supply: +5.0 V @ 90 mA  
50 Ohm Matched Output  
• Private Land Mobile Radio  
Functional Diagram  
General Description  
The HMC373LP3 / HMC373LP3E are versatile, high  
dynamic range GaAs MMIC Low Noise Amplifiers  
that integrates a low loss LNA bypass mode on the  
IC. The amplifier is ideal for GSM & CDMA cellular  
basestation front-end receivers operating between  
700 and 1000 MHz and provides 0.9 dB noise figure,  
14 dB of gain and +35 dBm IP3 from a single supply of  
+5.0V @ 90 mA. Input and output return losses are 28  
and 12 dB respectively with the LNA requiring minimal  
external components to optimize the RF input match,  
RF ground and DC bias. By presenting an open or  
short circuit to a single control line, the LNA can be  
switched into a low 2.0 dB loss bypass mode reducing  
the current consumption to 10 μA. A low cost, leadless  
3x3 mm QFN surface mount package (LP3) houses  
the low noise amplifier.  
Electrical Specifications, TA = +25° C, Vdd = +5V  
LNA Mode  
Parameter  
LNA Mode  
Bypass Mode  
Typ. Max.  
Units  
Min.  
Typ.  
810 - 960  
13.5  
0.008  
0.9  
Max.  
Min.  
10.5  
Typ.  
Max.  
Min.  
-2.8  
Frequency Range  
700 - 1000  
700 - 1000  
-2.0  
MHz  
dB  
Gain  
11.5  
14  
0.008  
1.0  
25  
Gain Variation Over Temperature  
Noise Figure  
0.015  
1.3  
0.015  
1.4  
0.002  
0.004 dB / °C  
dB  
dB  
Input Return Loss  
28  
30  
25  
Output Return Loss  
Reverse Isolation  
12  
11  
dB  
20  
19  
dB  
Power for 1dB Compression (P1dB)*  
Saturated Output Power (Psat)  
18  
21  
17  
20  
30  
dBm  
dBm  
22.5  
22  
Third Order Intercept (IP3)*  
(-20 dBm Input Power per tone, 1 MHz tone spacing)  
35.5  
90  
35  
90  
50  
dBm  
mA  
Supply Current (Idd)  
0.01  
* P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB and IP3 for Bypass Mode are referenced to RFIN.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
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