Datasheet > 358MS8GE

358MS8GE

更新时间： 2024-01-04 05:40:33

品牌	Logo	应用领域
HITTITE		缓冲放大器
页数	文件大小	规格书
6页	259K
描述
MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz

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数据手册

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358MS8GE 数据手册

HMC358MS8G / 358MS8GE

v04.0607

MMIC VCO w/ BUFFER

AMPLIFIER, 5.8 - 6.8 GHz

Typical Applications

Features

Low noise MMIC VCO w/Buffer Ampliﬁer

for C-Band applications such as:

Pout: +11 dBm

Phase Noise: -110 dBc/Hz @100 KHz

No External Resonator Needed

Single Supply: 3V @ 100 mA

15mm²MSOP8G SMT Package

• UNII & Pt. to Pt. Radios

• 802.11a & HiperLAN WLAN

• VSAT Radios

Functional Diagram

General Description

The HMC358MS8G & HMC358MS8GE are GaAs

InGaP Heterojunction Bipolar Transistor (HBT) MMIC

VCOs. The HMC358MS8G & HMC358MS8GE inte-

grate resonators, negative resistance devices, varac-

tor diodes, and buffer ampliﬁers. The VCO’s phase

noise performance is excellent over temperature,

shock, and process due to the oscillator’s monolithic

structure. Power output is 11 dBm typical from a 3.0V

supply voltage. The voltage controlled oscillator is

packaged in a low cost, surface mount 8 lead MSOP

package with an exposed base for improved RF and

thermal performance.

Electrical Specifications, T_A= +25° C, Vcc = +3V

Parameter

Frequency Range

Min.

Typ.

5.8 - 6.8

Max.

Units

GHz

dBm

dBc/Hz

Power Output

SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output

Tune Voltage (Vtune)

-110

Supply Current (Icc)

100

Tune Port Leakage Current (Vtune= 10V)

Output Return Loss

μA

Harmonics

2nd

3rd

-10

-20

Pulling (into a 2.0:1 VSWR)

Pushing @ Vtune= +3V

Frequency Drift Rate

150

0.8

MHz pp

MHz/V

MHz/°C

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

10 - 2

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