Datasheet > 356LP3E

356LP3E

更新时间： 2024-09-26 02:58:43

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
6页	385K
描述
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz

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356LP3E 数据手册

HMC356LP3 / 356LP3E

v02.0605

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 350 - 550 MHz

Typical Applications

The HMC356LP3 / HMC356LP3E is ideal for

basestation receivers:

Features

Noise Figure: ≤1.0 dB

+38 dBm Output IP3

• GSM 450 & GSM 480

• CDMA 450

Gain: 17 dB

Very Stable Gain vs. Supply & Temperature

Single Supply: +5.0V @ 104 mA

50 Ohm Matched Output

• Private Land Mobile Radio

Functional Diagram

General Description

The HMC356LP3 & HMC356LP3E are high dynamic

range GaAs PHEMT MMIC Low Noise Ampliﬁers

is ideal for GSM & CDMA cellular basestation and

Mobile Radio front-end receivers operating between

350 and 550 MHz. This LNA has been optimized to

provide 1.0 dB noise ﬁgure, 17 dB gain and +38 dBm

output IP3 from a single supply of +5.0V @ 104 mA.

Input and output return losses are 15 dB typical, with

the LNA requiring only four external components to

optimize the RF input match, RF ground and DC bias.

The HMC356LP3 & HMC356LP3E share the same

package and pinout with the HMC372LP3 high IP3

LNA. A low cost, leadless 3x3 mm (LP3) SMT QFN

package houses the low noise ampliﬁer.

Electrical Specifications, T_A= +25° C, Vs = +5V

Parameter

Frequency Range

Min.

Typ.

350 - 550

Max.

Units

MHz

Gain

Gain Variation Over Temperature

Noise Figure

0.0032

1.0

0.010

1.4

dB / °C

Input Return Loss

Output Return Loss

Reverse Isolation

Output Power for 1dB Compression (P1dB)

Saturated Output Power (Psat)

dBm

22.5

Output Third Order Intercept (IP3)

(-20 dBm Input Power per tone, 1 MHz tone spacing)

dBm

Supply Current (Idd)

104

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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