Datasheet > 351S8E

351S8E

更新时间： 2024-10-30 02:58:39

品牌	Logo	应用领域
HITTITE		局域网
页数	文件大小	规格书
6页	244K
描述
GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER, 0.7 - 1.2 GHz

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351S8E 数据手册

HMC351S8 / 351S8E

v03.0705

GaAs MMIC HIGH IP3 DOUBLE-

BALANCED MIXER, 0.7 - 1.2 GHz

Typical Applications

Features

The HMC351S8 / HMC351S8E is ideal for:

• Cellular Basestations

Conversion Loss: 9.0 dB

LO/IF Isolation: 35 dB

LO/RF Isolation: 42 dB

Input IP3: +25 dBm

• Cable Modems

• Fixed Wireless Access Systems

Input IP2: +48 dBm

Functional Diagram

General Description

The HMC351S8 & HMC351S8E are double balanced

mixers in 8 lead plastic surface mount packages.

The passive GaAs schottky diode mixer implements

planar on chip baluns and requires no external com-

ponents. The mixer can be used as an upconverter,

down converter, or modulator. The mixer provides 9

dB conversion loss and +25 dBm IIP3 with LO drive

levels of +19 dBm. The design was optimized for low

cost high volume applications where high converter

linearity is required. The high LO suppression of 42

dB yields excellent carrier suppression for modulator

applications.

Electrical Specifications, T_A= +25° C

LO = +19 dBm, IF = 100 MHz

Units

Parameter

Min.

Typ.

Max.

Frequency Range, RF & LO

Frequency Range, IF

Conversion Loss

Noise Figure (SSB)

LO to RF Isolation

LO to IF Isolation

RF to IF Isolation

IP3 (Input)

0.7 - 1.2

GHz

DC - 0.3

11.5

dBm

IP2 (Input)

1 dB Compression (Input)

*Unless otherwise noted, all measurements performed as downconverter, IF= 100 MHz.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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