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340PT PDF预览

340PT

更新时间: 2024-11-02 01:20:39
品牌 Logo 应用领域
尼尔 - NELLSEMI /
页数 文件大小 规格书
3页 456K
描述
Voltage rating up to 1600 V

340PT 数据手册

 浏览型号340PT的Datasheet PDF文件第2页浏览型号340PT的Datasheet PDF文件第3页 
RoHS  
340PT Series RoHS  
SEMICONDUCTOR  
Phase Control Thyristors  
Features  
A TYPE  
1.340 PT series Thyristors are deigned  
for various power controls  
2. Voltage rating up to 1600 V.  
3. Typical application  
20  
DC motor control  
Controlled DC power supplies  
AC controllers  
Ordering code  
xx  
(3)  
340  
(1)  
PT  
(2)  
A
(4)  
0
(5)  
19(0.75) DIA. MAX.  
x 1.83(0.07) MIN. DEEP  
2 HOLES3.56(0.14)  
13.7/14.4 (0.54/0.57)  
(1) Maximum average on-state current , A  
(2) For Phase Control Thyristor  
(3) Voltage code , code x 100 = V  
(4) package style : A , B , C , D ,E for Disc Type  
GATE TERM. FOR  
1.47 (0.06) DIA.  
PIN RECEPTACLE  
/ V  
DRM  
RRM  
38(1.50) DIA. MAX.  
(5) Terminal types  
0 - for eyelet  
All dimensions in millimeters(inches)  
Electrical Characteristics  
Val ue  
Type  
Con dition  
Symbol  
Par amet er  
Mean on-state current  
Uni t  
Min.  
1200  
Max.  
340  
180 half sine wav e , 50Hz  
I
T(AV)  
A
A
Dou ble side cooled , T = 55 C  
c
I
Dou ble side cooled , T = 25 C  
hs  
Max. RMS on-state current  
709  
T(RMS)  
V
V
V
V
& V  
& V  
t =10ms  
p
RRM  
DRM  
Rep etitive peak off-state voltage  
Rep etitive peak reverse voltage  
DRM  
DsM  
RRM  
= V  
1600  
V
& V + 100V  
RRM  
RsM  
DRM  
I
Sur ge on-state current  
For fusing coordination  
Threshold voltage  
4200  
107  
A
TSM  
10 ms half sine wav e  
= 0.6V  
I2  
KA2s  
V
V
R
RRM  
t
V
1.08  
1.3  
T(TO)  
r
t
On-state slope resistance  
Max. Forwar d voltage drop  
Hol ding current  
m
Ω
I
=900A , F=8.0KN  
2.08  
600  
V
V
TM  
=12V , I =1A  
TM  
V
I
mA  
A
H
A
d
Gate drive 20V , 20Ω , t 0.5 µs  
A/µs  
Cirtical rate of rise of turned-on current  
1000  
i/dt  
r
I
=400A , d  
=30V/µs  
TM  
v/dt  
=-10 A/µs  
t
µs  
Typical turn-off time  
250  
q
d
iRR/ dt  
=0.67 V  
d
V
V/µs  
Cirtical rate of rise of off-state voltage  
Max. average gate power  
Max. peak gate power square  
Gate trigger current  
1000  
v/dt  
DM  
DRM  
P
2
W
W
mA  
V
G
Squ are wav epulse width 100 µs  
P
I
30  
GM  
150  
3
GT  
V
=12V , I =1A  
A
A
V
Gate trigger voltage  
GT  
stg  
T
Storage tempe rature  
- 40  
- 40  
150  
125  
0.21  
5.5  
C
T
j
Max.operating temperaturerange  
C
R
Thermal resistance (junction to heatsink) Dou ble side cooled , clampi ng force 8.0 KN  
th( j-h )  
C/ W  
KN  
g
F
Moun ting force  
3.3  
m
W
t
App roximate wei ght  
70  
www.nellsemi.com  
Page 1 of 3  

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