Datasheet > 33N10_19

33N10_19

更新时间： 2022-02-26 13:47:14

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	245K
描述
isc N-Channel MOSFET Transistor

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33N10_19 数据手册

isc N-Channel MOSFET Transistor

33N10

FEATURES

· Static drain-source on-resistance:

RDS(on) ≤60mΩ

· Enhancement mode

· Fast Switching Speed

· 100% avalanche tested

· Minimum Lot-to-Lot variations for robust device

performance and reliable operation

DESCRITION

· Switching power supplies,converters,AC and DC motor controls

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

VALUE

100

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Drain Current-Continuous

Drain Current-Single Pulsed

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

I_DM

132

P_D

150

℃

150

T_j

-55~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

Rth(ch-c) Channel-to-case thermal resistance

Rth(ch-a) Channel-to-ambient thermal resistance

1.0

62.5

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