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33LV0408RPFI-20 PDF预览

33LV0408RPFI-20

更新时间: 2024-02-29 14:04:53
品牌 Logo 应用领域
麦斯威 - MAXWELL 静态存储器内存集成电路
页数 文件大小 规格书
12页 289K
描述
Standard SRAM, 512KX8, 20ns, CMOS, DFP-32

33LV0408RPFI-20 技术参数

生命周期:Obsolete零件包装代码:DFP
包装说明:DFP,针数:32
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:20 nsJESD-30 代码:R-XDFP-F32
长度:23.622 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:512KX8
封装主体材料:UNSPECIFIED封装代码:DFP
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:3.937 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
宽度:16.383 mmBase Number Matches:1

33LV0408RPFI-20 数据手册

 浏览型号33LV0408RPFI-20的Datasheet PDF文件第2页浏览型号33LV0408RPFI-20的Datasheet PDF文件第3页浏览型号33LV0408RPFI-20的Datasheet PDF文件第4页浏览型号33LV0408RPFI-20的Datasheet PDF文件第5页浏览型号33LV0408RPFI-20的Datasheet PDF文件第6页浏览型号33LV0408RPFI-20的Datasheet PDF文件第7页 
33LV0408  
4 Megabit (512K x 8-Bit)  
Low Voltage CMOS  
33LV0408  
Logic Diagram  
FEATURES:  
DESCRIPTION:  
• RAD-PAK® Technology radiation-hardened  
Maxwell Technologies’ 33LV0408 high-density 4  
Megabit SRAM microcircuit features a greater than  
100 krad (Si) total dose tolerance, depending upon  
space mission. Using Maxwell’s radiation-hard-  
ened RAD-PAK® packaging technology, the  
33LV0408 realizes a high density, high perfor-  
mance, and low power consumption. Its fully static  
design eliminates the need for external clocks,  
while the CMOS circuitry reduces power consump-  
tion and provides higher reliability. The 33LV0408  
is equipped with eight common input/output lines,  
chip select and output enable, allowing for greater  
system flexibility and eliminating bus contention.  
The 33LV0408 features the same advanced 512K  
x 8-bit SRAM, high-speed, and low-power demand  
as the commercial counterpart.  
against natural space radiation  
• 524,288 x 8 bit organization  
· Total dose hardness:  
- > 100 krad (Si), depending upon space mis-  
sion  
• Excellent Single Event Effect  
· - SELTH: > 68 MeV/mg/cm2  
· - SEUTH: = 3 MeV/mg/cm2  
- SEU saturated cross section: 6E-9 cm2/bit  
• Package:  
- 32-Pin RAD-PAK® flat pack  
• Fast access time:  
- 15, 20, 25 ns maximum times available  
• Single 3.3 Volt power supply  
• Fully static operation  
Maxwell Technologies' patented RAD-PAK® packag-  
ing technology incorporates radiation shielding in  
the microcircuit package. It eliminates the need for  
box shielding while providing the required radiation  
shielding for a lifetime in orbit or space mission. In  
a GEO orbit, RAD-PAK® provides greater than 100  
krad (Si) radiation dose tolerance. This product is  
available with screening up to Class S.  
- No clock or refresh required  
• Three state outputs  
• TTL compatible inputs and outputs  
• Low power:  
- Standby: 60 mA (TTL); 5 mA (CMOS)  
08.13.02 REV 1  
1
All data sheets are subject to change without notice  
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com  
©2002 Maxwell Technologies  
All rights reserved.  

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