Datasheet > 33H22

33H22

更新时间： 2024-02-18 00:58:09

品牌	Logo	应用领域
其他 - ETC		晶体光电晶体管光电晶体管
页数	文件大小	规格书
2页	34K
描述
Phototransistors

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33H22 数据手册

T-1 PACKAGE

NPN PHOTOTRANSISTOR

MID-33H22

Description

Package Dimensions

The MID-33H22 is a NPN silicon phototransistor mou-

nted in a lensed, special dark plastic package. The lens-

ing effect of the package allows an acceptance half view

angle of 15° that is measured from the optical axis to

the half sensitivity point .

Unit: mm ( inches

ψ3.00

(.118)

4.00

(.157)

5.25

(.207)

1.00

0.80±0.50

(.032±.020)

(.040)

FLAT DENOTES COLLECTOR

23.40MIN.

(.920)

0.50 TYP

(.020)

Features

1.00MIN

(.040)

l Wide range of collector current

l Lensed for high sensitivity

l Low cost plastic package

l compatible IRED : 850 nm or above

l Acceptance view angle : 30^o

2.54

(.100)

Notes :

1. Tolerance is ± 0.25mm (.010") unless otherwise noted .

2. Protruded resin under flange is 0.8 mm (.031") max

3. Lead spacing is measured where the leads emerge from the package.

Absolute Maximum Ratings

@ T_A=25^oC

Parameter

Power Dissipation

Maximum Rating

Unit

100

Collector-Emitter Voltage

Emitter-Collector Voltage

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

-55^oC to +100^oC

260^oC for 5 seconds

Unity Opto Technology Co., Ltd.

02/04/2002

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