Datasheet > 334A4

334A4

更新时间： 2022-01-21 09:38:00

品牌	Logo	应用领域
其他 - ETC		二极管
页数	文件大小	规格书
2页	35K
描述
Infrared Emitting Diodes (IRED)

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334A4 数据手册

AlGaAs/GaAs T-1 PACKAGE

MIE-334A4

INFRARED EMITTING DIODE

Description

Package Dimensions

The MIE-334A4 is an infrared emitting diode utilizing

GaAs with AlGaAs window coating chip technology.

It is molded in water clear plastic package.

Unit : mm (inches )

ψ3.00

(.118)

4.00

(.157)

5.25

(.207)

1.00

(.040)

0.80 ±0.50

(.031±.020)

FLAT DENOTES CATHODE

23.40MIN.

(.920)

Features

l High radiant power and high radiant intensity

l Suitable for DC and high pulse current operation

l Standard T-1 ( f 3mm ) package

l Peak wavelength l _p= 940 nm

l Good spectral matching to si-photodetector

l Radiant angle : ±15°

.50 TYP.

(.020)

1.00MIN.

(.040)

2.54

(.100)

Notes :

1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 0.4 mm (.0157") max.

3. Lead spacing is measured where the leads emerge from the package.

Absolute Maximum Ratings

@ T_A=25^oC

Parameter

Power Dissipation

Maximum Rating

Unit

120

Peak Forward Current(300pps,10ms pulse)

Continuos Forward Current

Reverse Voltage

100

-55^oC to +100^oC

260^oC for 5 seconds

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

Unity Opto Technology Co., Ltd.

02/04/2002

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