Datasheet > 3300A

3300A

更新时间： 2024-09-23 07:43:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	316K
描述
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench

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3300A 数据手册

December 2005

FDMC3300NZA

Monolithic Common Drain N-Channel 2.5V Specified PowerTrench

MOSFET

8A,20V,26mΩ

General Description

Features

This Dual N-Channel MOSFET has been designed using

Fairchild Semiconductor’s advanced Power Trench process

to optimize the R_DS(on)@V_GS=2.5v on special MicroFET

leadframe with all the drains on one side of the package.

R_DS(ON)= 26mΩ @ V_GS= 4.5 V, I_D= 8A

R_DS(ON)= 34mΩ @ V_GS= 2.5 V, I_D= 7A

>2000V ESD protection

Applications

Low Profile-1mm maxium-in the new package MicroFET

Li-lon Battery Pack

3.3x3.3 mm

Pb-free and RoHS Compliant

D 2

D 1

G 2

S 2

G 1

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DSS

V_GSS

Parameter

Ratings

Units

Drain-Source Voltage

Gate-Source Voltage

±12

Drain Current -Continuous

-Pulsed

(Note 1a)

I_D

P_D

Power dissipation (Steady State)

(Note 1a)

2.4

^oC

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

R_θJA

R_θJC

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

(Note 1)

108

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

^oC/W

Package Marking and Ordering Information

Device Marking

Device

FDMC3300NZA

Reel Size

Tape Width

Quantity

3000 units

3300A

7”

12mm

FDMC3300NZA Rev B

www.fairchildsemi.com

12 3 4 5 6 7

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