Datasheet > 326MS8GE

326MS8GE

更新时间： 2024-09-10 03:57:07

品牌	Logo	应用领域
HITTITE		放大器驱动
页数	文件大小	规格书
6页	283K
描述
GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz

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326MS8GE 数据手册

HMC326MS8G / 326MS8GE

v07.0607

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 3.0 - 4.5 GHz

Typical Applications

Features

The HMC326MS8G / HMC326MS8GE is ideal for:

Psat Output Power: +26 dBm

• Microwave Radios

> 40% PAE

• Broadband Radio Systems

Output IP3: +36 dBm

High Gain: 21 dB

• Wireless Local Loop Driver Ampliﬁer

Vs: +5.0V

Ultra Small Package: MSOP8G

Functional Diagram

General Description

The HMC326MS8G & HMC326MS8GE are high

efﬁciency GaAs InGaP Heterojunction Bipolar Tran-

sistor (HBT) MMIC driver ampliﬁers which operate

between 3.0 and 4.5 GHz. The ampliﬁer is packaged

in a low cost, surface mount 8 leaded package with

an exposed base for improved RF and thermal perfor-

mance. The ampliﬁer provides 21 dB of gain and +26

dBm of saturated power from a +5.0V supply voltage.

Power down capability is available to conserve current

consumption when the ampliﬁer is not in use. Internal

circuit matching was optimized to provide greater than

40% PAE.

Electrical Specifications, T_A= +25° C, Vs = 5V, Vpd = 5V

Parameter

Min.

Typ.

Max.

Units

GHz

Frequency Range

3.0 - 4.5

Gain

Gain Variation Over Temperature

Input Return Loss

0.025

0.035

dB / °C

Output Return Loss

Output Power for 1dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

23.5

dBm

Supply Current (Icc)

Control Current (Ipd)

Switching Speed

Vpd = 0V / 5V

tOn/tOff

0.001 / 130

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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