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3267

更新时间： 2024-02-20 21:55:41
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德州仪器 - TI /
页数 文件大小 规格书
14页 332K
描述
ISO5500EVM

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3267 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：ROHS COMPLIANT
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.58熔断特性：TIME LAG
主体高度：31.75 mm主体长度或直径：6.35 mm
电路保护类型：ELECTRIC FUSEJESD-609代码：e3
焦耳积分标称：47 J安装特点：INLINE/HOLDER
最高工作温度：125 °C最低工作温度：-55 °C
包装方法：BULK物理尺寸：6.35mm x 31.75mm
额定分断能力：400 A额定电流：7 A
额定电压（交流）：250 V参考标准：CE; CSA; KTL; PSE; UL
表面贴装：NO端子面层：Matte Tin (Sn)
端子形状：END CAPBase Number Matches：1

3267 数据手册

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User's Guide  
SLLU136–September 2011  
ISO5500EVM  
This document describes the ISO5500 Evaluation Module (EVM) and allows designers to analyze and  
evaluate the Texas Instruments ISO5500 Isolated Gate Driver.  
The ISO5500EVM can be used to evaluate device parameters while acting as a guide for board layout.  
The board allows the user to evaluate device performance using a simulated (10-nF) IGBT load installed  
on the board, or to install an IGBT or MOSFET (TO-247 package) onto the board and drive it with the  
ISO5500.  
Contents  
1
2
Introduction .................................................................................................................. 1  
1.1  
1.2  
Overview ............................................................................................................ 1  
ISO5500EVM Kit Contents ....................................................................................... 2  
Printed-Circuit Board ....................................................................................................... 2  
2.1  
2.2  
ISO5500 Operation ................................................................................................ 2  
Schematic and Bill of Materials .................................................................................. 5  
List of Figures  
1
2
3
4
ISO5500 Pinout and Functional Block Diagram ........................................................................  
High-Side Interconnection Diagram ......................................................................................  
Low-Side Interconnection Diagram .......................................................................................  
Component Changes to Change Turnon/Turnoff .......................................................................  
2
4
4
5
List of Tables  
1
2
Test Points...................................................................................................................  
Bill of Materials ..............................................................................................................  
5
6
1
Introduction  
1.1 Overview  
This ISO5500EVM was designed to allow the user to evaluate the performance and features of the  
ISO5500. This includes the IGBT desaturation protection (DESAT) and the UVLO circuit that ensures a  
sufficient gate voltage is available to drive the IGBT or MOSFET. The printed-circuit board (PCB) also  
includes provisions to adjust the turnon/turnoff characteristics by changing the loading between the  
ISO5500 output and the IGBT (or MOSFET) gate.  
The EVM kit includes the ISO5500 data sheet. Figure 1 shows the device pinout and the functional block  
diagram.  
QuietZone is a trademark of 3M.  
1
SLLU136–September 2011  
ISO5500EVM  
Submit Documentation Feedback  
Copyright © 2011, Texas Instruments Incorporated  
 
 
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