VS-31DQ05, VS-31DQ05-M3, VS-31DQ06, VS-31DQ06-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 3.3 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
Cathode
Anode
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
C-16
• Guard ring for enhanced ruggedness and
long term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
PRODUCT SUMMARY
Package
DO-201AD (C-16)
3.3 A
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
IF(AV)
VR
50 V, 60 V
VF at IF
See Electrical table
15 mA at 125 °C
150 °C
DESCRIPTION
I
RM max.
The VS-31DQ... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection
TJ max.
Diode variation
EAS
Single die
5.0 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
3.3
UNITS
Rectangular waveform
A
V
50/60
340
tp = 5 μs sine
A
VF
3 Apk, TJ = 25 °C
0.62
V
TJ
- 40 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-31DQ05
VS-31DQ05-M3
VS-31DQ06
VS-31DQ06-M3
UNITS
Maximum DC reverse voltage
VR
50
50
60
60
V
Maximum working peak
reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TL = 105 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
See fig. 4
IF(AV)
3.3
A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
5 µs sine or 3 µs rect. pulse
340
Followinganyratedload
condition and with rated
VRRM applied
IFSM
10 ms sine or 6 ms rect. pulse
55
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 1 A, L = 10 mH
5.0
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.0
Revision: 19-Sep-11
Document Number: 93320
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000