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313295-04 PDF预览

313295-04

更新时间: 2024-09-18 03:56:55
品牌 Logo 应用领域
恒忆 - NUMONYX 存储无线
页数 文件大小 规格书
98页 1156K
描述
Numonyx StrataFlash Wireless Memory

313295-04 数据手册

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®
Numonyx™ StrataFlash Wireless Memory  
(L18) with AD-Multiplexed I/O  
Datasheet  
Product Features  
„ High performance Read-While-Write/Erase  
„ Power  
— 1.7 V to 2.0 V VCC operation  
— 85 ns initial access  
— 54MHz with zero wait state, 14 ns clock-to-  
data output synchronous-burst mode  
— I/O voltage: 1.35 V – 2.0 V, 1.7 V– 2.0 V  
— Standby current: 25 µA (Typ) for 256-Mbit  
— 4-, 8-, 16-, and continuous-word burst  
mode  
— Burst suspend  
— 4-Word synchronous read current: 15 mA  
(Typ) @ 54 MHz  
— Automatic Power Savings (APS) mode  
— Programmable WAIT configuration  
„ Security  
— Buffered Enhanced Factory Programming  
(Buffered EFP): 5 µs/byte (Typ)  
— 1.8 V low-power buffered and non-buffered  
programming @ 7 µs/byte (Typ)  
— OTP space:  
• 64 unique device identifier bits  
• 64 user-programmable OTP bits  
• Additional 2048 user-programmable OTP  
bits  
„ Architecture  
— Absolute write protection: VPP = GND  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down  
— Asymmetrically-blocked architecture  
— Multiple 8-Mbit partitions: 64Mb and 128Mb  
devices  
— Multiple 16-Mbit partitions: 256Mb devices  
— Four 16-KWord parameter blocks: top  
configuration  
— 64-KWord main blocks  
„ Software  
— 20 µs (Typ) program suspend  
— 20 µs (Typ) erase suspend  
— Dual-operation: Read-While-Write (RWW)  
or Read-While-Erase (RWE)  
— Intel® Flash Data Integrator (FDI)  
optimized  
— Status register for partition and device  
status  
„ Density and Packaging  
— Basic Command Set (BCS) and Extended  
Command Set (ECS) compatible  
— Common Flash Interface (CFI) capable  
„ Quality and Reliability  
— 64-, 128-, and 256 Mbit density in VF BGA  
package  
— 16-bit wide data bus  
— Expanded temperature: –25° C to +85° C  
— Minimum 100,000 erase cycles per block  
— Intel ETOX* VIII process technology (0.13  
µm)  
313295-04  
November 2007  

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