是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | O-PALF-W2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.7 | 其他特性: | PRSM-MIN, UL RECOGNIZED |
最大击穿电压: | 95.4 V | 最小击穿电压: | 87.1 V |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | O-PALF-W2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 最大非重复峰值反向功率耗散: | 30000 W |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | BIDIRECTIONAL | 最大功率耗散: | 8 W |
最大重复峰值反向电压: | 78 V | 表面贴装: | NO |
技术: | AVALANCHE | 端子面层: | Tin (Sn) |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
30KP78CATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 78V V(RWM), Bidirectional, 1 Element, Silicon, PLA | |
30KP78C-BP | MCC |
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Trans Voltage Suppressor Diode, 30000W, 78V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
30KP78C-BP-HF | MCC |
获取价格 |
Trans Voltage Suppressor Diode | |
30KP78CE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 78V V(RWM), Bidirectional, 1 Element, Silicon, PLA | |
30KP78CHR | DIGITRON |
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Trans Voltage Suppressor Diode | |
30KP78CTR | MICROSEMI |
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Trans Voltage Suppressor Diode, 30000W, 78V V(RWM), Bidirectional, 1 Element, Silicon, PLA | |
30KP78CTRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 78V V(RWM), Bidirectional, | |
30KP78S | LGE |
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Glass passivated junction chip | |
30KP78SA | LGE |
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Glass passivated junction chip | |
30KP78SC | LGE |
获取价格 |
Glass passivated junction chip |