品牌 | Logo | 应用领域 |
RECTRON | / | |
页数 | 文件大小 | 规格书 |
6页 | 235K | |
描述 | ||
Package / Case : R-6;Mounting Style : Through Hole;Power Rating : 30000 W;Polarity : Bidirectional;Breakdown Voltage Vbr : 78.2 V;Operating Standoff Voltage : 70 V;Clamping Voltage Vc : 109 V;Max Peak Current Ipk : 278 A;Voltage Tolerance : 10% |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
30KP70CA-BP | MCC |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 70V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
30KP70CAE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 70V V(RWM), Bidirectional, 1 Element, Silicon, PLA | |
30KP70CA-T3 | WTE |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 70V V(RWM), Bidirectional, 1 Element, Silicon, | |
30KP70CA-TP | MCC |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 70V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
30KP70CA-TP-HF | MCC |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 70V V(RWM), Bidirectional, 1 Element, Silicon, | |
30KP70CE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 70V V(RWM), Bidirectional, 1 Element, Silicon, PLA | |
30KP70CHR | DIGITRON |
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Trans Voltage Suppressor Diode | |
30KP70S | LGE |
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Glass passivated junction chip | |
30KP70SA | LGE |
获取价格 |
Glass passivated junction chip | |
30KP70SC | LGE |
获取价格 |
Glass passivated junction chip |