品牌 | Logo | 应用领域 |
RECTRON | / | |
页数 | 文件大小 | 规格书 |
6页 | 235K | |
描述 | ||
Package / Case : R-6;Mounting Style : Through Hole;Power Rating : 30000 W;Polarity : Bidirectional;Breakdown Voltage Vbr : 64.8 V;Operating Standoff Voltage : 58 V;Clamping Voltage Vc : 92.4 V;Max Peak Current Ipk : 327.9 A;Voltage Tolerance : 10% |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
30KP58CA-AP | MCC |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
30KP58CA-AP-HF | MCC |
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Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, | |
30KP58CA-BP | MCC |
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Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
30KP58CA-BP-HF | MCC |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, | |
30KP58CA-TP-HF | MCC |
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Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, | |
30KP58CATR | MICROSEMI |
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Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, PLA | |
30KP58CE3TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, PLA | |
30KP58E3TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Unidirectional, 1 Element, Silicon, PL | |
30KP58S | LGE |
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Glass passivated junction chip | |
30KP58SA | LGE |
获取价格 |
Glass passivated junction chip |