30KP130CATR

更新时间： 2024-11-28 13:04:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		瞬态抑制器二极管
页数	文件大小	规格书
3页	182K
描述
Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2

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30KP130CATR 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	PLASTIC PACKAGE-2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.29
最大击穿电压：	159 V	最小击穿电压：	144 V
击穿电压标称值：	151.5 V	外壳连接：	ISOLATED
最大钳位电压：	209 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	O-PALF-W2	JESD-609代码：	e0
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	30000 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	BIDIRECTIONAL	最大功率耗散：	1.61 W
认证状态：	Not Qualified	最大重复峰值反向电压：	130 V
子类别：	Transient Suppressors	表面贴装：	NO
技术：	AVALANCHE	端子面层：	TIN LEAD
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

30KP130CATR 数据手册

30KP33 thru 30KP400A

30kW Transient Voltage Suppressor

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These Microsemi 30 kW Transient Voltage Suppressors (TVSs) are

designed for applications requiring protection of voltage-sensitive electronic

devices that may be damaged by harsh or severe voltage transients

including lightning per IEC61000-4-5 and class levels with various source

impedances described herein. This series is available in 33 to 400 volt

standoff voltages (V_WM) in both unidirectional and bi-directional with either

5% or 10% tolerances of the Breakdown Voltage (V_BR). Microsemi also

offers numerous other TVS products to meet higher or lower power

demands and special applications

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Available in both Unidirectional and Bidirectional

•

Protection from switching transients and induced RF

construction (Bidirectional with C or CA suffix)

Protection from ESD, and EFT per IEC 61000-4-2 and

•

Selections for 33 to 400 volt standoff voltages V_WM

IEC 61000-4-4

Suppresses transients up to 30 kW @ 10/1000 µs

•

Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

and 200 kW @ 8/20 µs (see Figure 1)

Class 1,2,3,4: 30KP33A - 30KP400A or CA

•

Fast response

Class 5: 30KP33A - 30KP400A or CA (short distance)

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers.

Class 5: 30KP33A - 30KP220A or CA (long distance)

•

Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance:

Class 1,2, 3: 30KP33A to 30KP400A or CA

Class 4: 30KP33A to 30KP220A or CA

•

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

Secondary lightning protection per IEC61000-4-5 with

2 Ohms source impedance:

Class 2: 30KP33A to 30KP400A or CA

Class 3: 30KP33 to 30KP220A or CA

Class 4: 30KP33 to 30KP110A or CA

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Peak Pulse Power dissipation at 25^ºC: 30,000

•

CASE: Void-free transfer molded thermosetting

watts at 10/1000 µs (also see Figures 1 and 2)

Impulse repetition rate (duty factor): 0.05%

epoxy body meeting UL94V-0

•

FINISH: Tin-Lead plated readily solderable per MIL-

STD-750, method 2026

MARKING: Body marked with part number

_clamping(0 volts to V_(BR)min.): < 100 ps theoretical

for unidirectional and < 5 ns for bidirectional

•

Operating & Storage temperature: -65^ºC to +150^ºC

POLARITY: Band denotes cathode. Bidirectional not

Thermal resistance: 17.5^ºC/W junction to lead, or

77.5^ºC/W junction to ambient when mounted on

FR4 PC board with 4 mm²copper pads (1oz) and

track width 1 mm, length 25 mm

marked for polarity

•

WEIGHT: 1.8 grams.

TAPE & REEL option: Standard per EIA-296 for axial

package (add “TR” suffix to part number)

•

Steady-State Power dissipation: 7 watts at T_L=

27.5^oC, or 1.61 watts at T_A= 25^ºC when mounted

on FR4 PC board described for thermal resistance

•

See package dimension on last page

•

Forward Surge: 250 Amps 8.3 ms half-sine wave

Solder temperatures: 260 ^ºC for 10 s (maximum)

Microsemi

Page 1

06-24-2003 REV F

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与30KP130CATR相关器件

型号	品牌	获取价格	描述	数据表
30KP130CATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 130V V(RWM), Bidirectional,
30KP130CHR	DIGITRON	获取价格	Trans Voltage Suppressor Diode
30KP130C-PBF	DIGITRON	获取价格	Trans Voltage Suppressor Diode
30KP130CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, PL
30KP130E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, P
30KP130HR	DIGITRON	获取价格	Trans Voltage Suppressor Diode
30KP130S	LGE	获取价格	Glass passivated junction chip
30KP130SA	LGE	获取价格	Glass passivated junction chip
30KP130SC	LGE	获取价格	Glass passivated junction chip
30KP130SCA	LGE	获取价格	Glass passivated junction chip

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