The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 25 December 2013.
INCH-POUND
MIL-PRF-19500/681C
25 September 2013
SUPERSEDING
MIL-PRF-19500/681B
5 December 2007
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP,
TYPE 1N6843CCU3, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, Schottky dual power rectifier
diodes for use in high frequency switching power supplies and resonant power converters. Four levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (U3).
1.3 Maximum ratings. Unless otherwise specified, T = +25°C.
C
Column 1
Type
Column 2
Column 3
(1) (2)
Column 4
Column 5
Column 6
Column 7
Column 8
V
RWM
I
I
(2)
T
STG
and
C
J
at 5 V
O
FSM
t = 8.3 ms,
R
θJC
R
θJC
(3)
T
=
(2)
C
p
T
J
+25°C
T
= +25°C
C
pF
V dc
100
A dc
15
A (pk)
100
°C/W
°C/W
°C
1N6843CCU3
3.5
1.75
-65 to +150
275
(1) See temperature-current derating curves in figure 2.
(2) Each leg.
(3) Entire package.
* 1.4 Primary electrical characteristics. R
= 1.75°C/W maximum for entire package. R
= 40°C/W maximum
θJC
θJA
each leg. R
= 3.5°C/W maximum each leg, see figure 3.
θJC
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
AMSC N/A
FSC 5961