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309UA200P4 PDF预览

309UA200P4

更新时间: 2024-10-27 10:32:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 93K
描述
Rectifier Diode, 1 Phase, 1 Element, 330A, 2000V V(RRM), Silicon, DO-205AB,

309UA200P4 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.71其他特性:HIGH SURGE CAPABILITY
应用:HIGH VOLTAGE HIGH POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-205AB
JESD-30 代码:O-CUPM-X1最大非重复峰值正向电流:8640 A
元件数量:1相数:1
端子数量:1最大输出电流:330 A
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:POST/STUD MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:2000 V
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:40
Base Number Matches:1

309UA200P4 数据手册

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Bulletin I2032 rev. A 12/94  
301U(R) SERIES  
Stud Version  
STANDARD RECOVERY DIODES  
Features  
300A  
Wide current range  
High voltage ratings up to 2500V  
High surge current capabilities  
Stud cathode and stud anode version  
TypicalApplications  
Converters  
Power supplies  
Machine tool controls  
High power drives  
Medium traction applications  
Major Ratings and Characteristics  
301U(R)  
Parameters  
Units  
80 to 200  
330  
250  
300  
IF(AV)  
A
°C  
A
@ TC  
120  
120  
IF(RMS)  
IFSM  
520  
470  
@ 50Hz  
@ 60Hz  
@ 50Hz  
@ 60Hz  
8250  
6050  
6335  
183  
A
8640  
A
I2t  
340  
KA2s  
KA2s  
V
311  
167  
case style  
DO-205AB (DO-9)  
VRRM range  
TJ  
800 to 2000  
- 40 to 180  
2500  
- 40 to 180  
°C  
1
www.irf.com  

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