Datasheet > 30-F212R6A050SC-M447-E-PM

30-F212R6A050SC-M447-E-PM

更新时间： 2022-02-26 12:33:36

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
18页	2403K
描述
IGBT4 technology for low saturation losses

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数据手册

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30-F212R6A050SC-M447-E-PM

30-F212R6A050SC01-M447E10-PM

flowPACK 2

1200V/50A

Features

flowPACK 2

● Inverter, blocking diodes

● Built-in thermistor

● IGBT4 technology for low saturation losses

Target Applications

● Power Regeneration

Schematic

Types

● 30-F212R6A050SC-M447E

● 30-F212R6A050SC01-M447E10

Maximum Ratings

T_j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

D7,D8

V_RRM

I_FAV

Repetitive peak reverse voltage

DC forward current

1600

T_h=80°C

T_c=80°C

154

208

T_j=T_jmax

t_p=10ms

T_j=T_jmax

I_FSM

Surge forward current

I2t-value

1270

2400

T_j=25°C

I²t

A²s

T_h=80°C

T_c=80°C

189

287

P_tot

Power dissipation per Diode

Maximum Junction Temperature

T_jmax

150

°C

T1,T2,T3,T4,T5,T6

V_CE

I_C

Collector-emitter break down voltage

DC collector current

1200

T_h=80°C

T_c=80°C

T_j=T_jmax

I_Cpulse

t_plimited by T_jmax

Pulsed collector current

150

100

Turn off safe operating area

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

VCE ≤ 1200V, Tj ≤ Top max

T_h=80°C

T_c=80°C

163

247

P_tot

T_j=T_jmax

V_GE

t_SC

T_j≤150°C

µs

V_CC

V_GE=15V

800

T_jmax

Maximum Junction Temperature

175

°C

Revision: 1

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