Datasheet > 30-F212PMA050M7-L888A79

30-F212PMA050M7-L888A79

更新时间： 2024-11-25 11:08:15

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
34页	4725K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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中文翻译

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30-F212PMA050M7-L888A79 数据手册

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30-F212PMA050M7-L888A79

30-P212PMA050M7-L888A79Y

datasheet

1200 V / 50 A

flow PIM 2

Features

flow 2 housing

● IGBT M7 with low V _CEsatand improved EMC behavior

● Open emitter configuration

● Compact and low inductive design

● Built-in NTC

Solder pins

Press-fit pins

Schematic

Target applications

● Industrial Drives

Types

● 30-F212PMA050M7-L888A79

● 30-F212PMA050M7-L888A79-/3/

● 30-P212PMA050M7-L888A79Y

● 30-P212PMA050M7-L888A79Y-/3/

Maximum Ratings

Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Condition

Value

Unit

Rectifier Diode

V_RRM

Peak repetitive reverse voltage

1600

I_F

I_FSM

I²t

Continuous (direct) forward current

Surge (non-repetitive) forward current

Surge current capability

T_j= T_jmax

T_s= 80 °C

490

1200

106

150

50 Hz Single Half Sine Wave

t_p= 8,3 ms

T_j= 150 °C

T_s= 80 °C

A²s

°C

P_tot

T_jmax

Total power dissipation

T_j= T_jmax

Maximum junction temperature

08 Mar. 2019 / Revision 4

12 3 4 5 6 7...34

中文翻译

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