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3.0SMCJ33A PDF预览

3.0SMCJ33A

更新时间: 2024-11-08 14:56:27
品牌 Logo 应用领域
力特 - LITTELFUSE 电子局域网光电二极管
页数 文件大小 规格书
6页 856K
描述
3.0SMCJ系列专门设计用于保护敏感电子设备不受闪电及其他瞬态电压现象引起的瞬态电压的影响。 特征和优势: 应用:

3.0SMCJ33A 数据手册

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TVS Diode Datasheet  
3.0SMCJ Series  
Surface Mount – 3000W – DO-214AB  
RoHS  
Pb e3  
Description  
The 3.0SMCJ Series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Features & Benefits  
3000W PPPM peak pulse  
Excellent clamping capability  
power capability at 10/1000μs  
waveform, repetition rate (duty  
cycles):0.01%  
Low incremental surge  
resistance  
High temperature to reflow  
soldering guaranteed:  
260°C/40sec  
For surface mounted  
applications in order to  
optimize board space  
VBR @TJ= VBR@25°C x (1+αT  
x (TJ - 25)) (αT:Temperature  
Coefficient, typical value is  
0.1%)  
Low profile package  
Typical failure mode is short  
from over-specified voltage or  
current  
Additional Information  
UL Recognized compound  
meeting flammability rating  
V-0.  
Whisker test is conducted  
based on JEDEC JESD201A  
per its table 4a and 4c  
Meet MSL level1, per  
J-STD-020, LF maximun peak  
of 260°C  
ESD protection of data lines  
in accordance with IEC  
61000-4-2,30kV(Air), 30kV  
(Contact)  
Resources  
Accessories  
Samples  
Matte tin lead–free plated  
Halogen free and RoHS  
compliant  
Agency Approvals  
EFT protection of data lines in  
accordance with IEC 61000-  
4-4  
Pb-free E3 means 2nd level  
interconnect is Pb-free and  
the terminal finish material  
is tin(Sn) (IPC/JEDEC J-STD-  
609A.01)  
Agency  
Agency File Number  
Built-in strain relief  
E230531  
Glass passivated chip junction  
Fast response time: typically  
less than 1.0ps from 0V to BV  
min  
Maximum Ratings andThermal Characteristics  
(TA=25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Applications  
Peak Pulse Power Dissipation by  
10/1000μs Waveform  
PPPM  
3000  
W
TVS components are ideal for the protection of I/O  
Interfaces, VCC bus and other vulnerable circuits used in  
Telecom, Computer, Industrial and Consumer electronic  
applications.  
(Fig.4)(Note 1), (Note 2)  
Power dissipation on infinite  
heatsink atTC = 25 °C  
PD  
6.5  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
IFSM  
300  
Functional Diagram  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
Only  
VF  
3.5  
V
Bi-directional  
OperatingTemperature Range  
StorageTemperature Range  
TJ  
-65 to 150  
-65 to 175  
°C  
°C  
TSTG  
Cathode  
Anode  
TypicalThermal Resistance Junction  
to Lead  
15  
75  
°C/W  
°C/W  
RθJL  
RθJA  
Uni-directional  
TypicalThermal Resistance Junction  
to Ambient  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTJ (initial) =25OC per Fig. 3.  
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
component only, duty cycle=4 per minute maximum.  
© 2023 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: GD. 05/16/23  

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