Datasheet > 3.0SMCJ10CA

3.0SMCJ10CA

更新时间： 2024-11-25 14:56:27

品牌	Logo	应用领域
力特 - LITTELFUSE		电子
页数	文件大小	规格书
6页	856K
描述
3.0SMCJ系列专门设计用于保护敏感电子设备不受闪电及其他瞬态电压现象引起的瞬态电压的影响。特征和优势: 应用:

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

3.0SMCJ10CA 数据手册

TVS Diode Datasheet

3.0SMCJ Series

Surface Mount – 3000W – DO-214AB

RoHS

Pb e3

Description

The 3.0SMCJ Series is designed specifically to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Features & Benefits

■ 3000W P_PPMpeak pulse

■ Excellent clamping capability

power capability at 10/1000μs

waveform, repetition rate (duty

cycles):0.01%

■ Low incremental surge

resistance

■ High temperature to reﬂow

soldering guaranteed:

260°C/40sec

■ For surface mounted

applications in order to

optimize board space

■ V_BR@T_J= V_BR@25°C x (1+αT

x (T_J- 25)) (αT:Temperature

Coefﬁcient, typical value is

0.1%)

■ Low proﬁle package

■ Typical failure mode is short

from over-speciﬁed voltage or

current

Additional Information

■ UL Recognized compound

meeting ﬂammability rating

V-0.

■ Whisker test is conducted

based on JEDEC JESD201A

per its table 4a and 4c

■ Meet MSL level1, per

J-STD-020, LF maximun peak

of 260°C

■ ESD protection of data lines

in accordance with IEC

61000-4-2,30kV(Air), 30kV

(Contact)

Resources

Accessories

Samples

■ Matte tin lead–free plated

■ Halogen free and RoHS

compliant

Agency Approvals

■ EFT protection of data lines in

accordance with IEC 61000-

4-4

■ Pb-free E3 means 2nd level

interconnect is Pb-free and

the terminal ﬁnish material

is tin(Sn) (IPC/JEDEC J-STD-

609A.01)

Agency

Agency File Number

■ Built-in strain relief

E230531

■ Glass passivated chip junction

■ Fast response time: typically

less than 1.0ps from 0V to BV

min

Maximum Ratings andThermal Characteristics

(T_A=25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Applications

Peak Pulse Power Dissipation by

10/1000μs Waveform

P_PPM

3000

TVS components are ideal for the protection of I/O

Interfaces, V_CCbus and other vulnerable circuits used in

Telecom, Computer, Industrial and Consumer electronic

applications.

(Fig.4)(Note 1), (Note 2)

Power dissipation on inﬁnite

heatsink atT_C= 25 °C

P_D

6.5

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

I_FSM

300

Functional Diagram

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

Only

V_F

3.5

Bi-directional

OperatingTemperature Range

StorageTemperature Range

T_J

-65 to 150

-65 to 175

°C

T_STG

Cathode

Anode

TypicalThermal Resistance Junction

to Lead

°C/W

R_θJL

R_θJA

Uni-directional

TypicalThermal Resistance Junction

to Ambient

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated aboveT_J(initial) =25^OC per Fig. 3.

2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional

component only, duty cycle=4 per minute maximum.

Speciﬁcations are subject to change without notice.

Revised: GD. 05/16/23

12 3 4 5 6

中文翻译

下载PDF

与3.0SMCJ10CA相关器件

型号	品牌	获取价格	描述	数据表
3.0SMCJ10CA-AU	PANJIT	获取价格	SMC
3.0SMCJ10CA-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 3000W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
3.0SMCJ10CA-T1	WTE	获取价格	Trans Voltage Suppressor Diode, 3000W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
3.0SMCJ10CA-T3	WTE	获取价格	Trans Voltage Suppressor Diode, 3000W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
3.0SMCJ10CA-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 3000W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
3.0SMCJ10C-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 3000W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
3.0SMCJ10C-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 3000W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
3.0SMCJ10-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 3000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-
3.0SMCJ10-LFR	FRONTIER	获取价格	3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
3.0SMCJ10-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 3000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-

与3.0SMCJ10CA相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

3.0SMCJ10CA

3.0SMCJ10CA 数据手册

与3.0SMCJ10CA相关器件

与3.0SMCJ10CA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

3.0SMCJ10CA

3.0SMCJ10CA 数据手册

与3.0SMCJ10CA相关器件

与3.0SMCJ10CA相关文章

您还可以找

您在本页遇到什么问题？