Datasheet > 2V7002K

2V7002K

更新时间： 2024-11-30 12:54:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	103K
描述
Small Signal MOSFET 60 V, 380 mA, Single, NâChannel, SOTâ23

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2V7002K 数据手册

2N7002K, 2V7002K

Small Signal MOSFET

60 V, 380 mA, Single, N−Channel, SOT−23

Features

• ESD Protected

• Low R

DS(on)

http://onsemi.com

• Surface Mount Package

• 2V Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAX

I MAX

(BR)DSS

DS(on)

1.6 W @ 10 V

2.5 W @ 4.5 V

60 V

380 mA

SIMPLIFIED SCHEMATIC

Applications

• Low Side Load Switch

• Level Shift Circuits

Gate

• DC−DC Converter

Drain

• Portable Applications i.e. DSC, PDA, Cell Phone, etc.

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Source

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

Unit

DSS

(Top View)

MARKING DIAGRAM

& PIN ASSIGNMENT

Drain

Drain Current (Note 1)

Steady State 1 sq in Pad

T = 25°C

380

270

T = 85°C

Drain Current (Note 2)

Steady State Minimum Pad

T = 25°C

320

230

T = 85°C

704 MG

SOT−23

CASE 318

STYLE 21

Power Dissipation

Steady State 1 sq in Pad

Steady State Minimum Pad

420

300

Gate

Source

Pulsed Drain Current (t = 10 ms)

1.5

704

= Specific Device Code*

= Date Code*

= Pb−Free Package

Operating Junction and Storage

Temperature Range

T , T

−55 to

+150

°C

STG

(Note: Microdot may be in either location)

Source Current (Body Diode)

300

260

*Specific Device Code, Date Code or overbar

orientation and/or location may vary depend-

ing upon manufacturing location. This is a

representation only and actual devices may

not match this drawing exactly.

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

°C

Gate−Source ESD Rating

(HBM, Method 3015)

ESD

2000

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.

2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.

ORDERING INFORMATION

†

Device

Package

Shipping

2N7002KT1G

SOT−23

3000 / Tape & Reel

(Pb−Free)

2V7002KT1G

SOT−23

3000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2013

Publication Order Number:

February, 2013 − Rev. 11

2N7002K/D

12 3 4 5 6

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与2V7002K相关器件

型号	品牌	获取价格	描述	数据表
2V7002KT1G	ONSEMI	获取价格	Small Signal MOSFET 60 V, 380 mA, Single, N.Channel, SOT.23
2V7002L	ONSEMI	获取价格	Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23
2V7002LT1G	ONSEMI	获取价格	Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23
2V7002LT3G	ONSEMI	获取价格	Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23
2V7002W	ONSEMI	获取价格	Small Signal MOSFET 60 V, 340 mA, Single, N.Channel, SC.70
2V7002WT1G	ONSEMI	获取价格	Small Signal MOSFET 60 V, 340 mA, Single, N.Channel, SC.70
2V7BC	SEMTECH	获取价格	Silicon Epitaxial Planar Zener Diodes
2V7BC	SWST	获取价格	稳压二极管
2V7BCA	SEMTECH	获取价格	Silicon Epitaxial Planar Zener Diodes
2V7BCA	SWST	获取价格	稳压二极管

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