Datasheet > 2ST3360K

2ST3360K

更新时间： 2024-10-15 14:58:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	266K
描述
Rad-Hard 60 V, 0.8 A, NPN and PNP transistors in single package

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2ST3360K 数据手册

2ST3360K

Datasheet

Rad-Hard 60 V, 0.8 A, NPN and PNP transistors in single package

Features

Polarity

NPN

IC (max.)

0.8 A

(BR)CEO

60 V

160

PNP

-60 V

-0.8 A

Flat-8

1. at IC = 1 A and V = 2 V

•

100 krad

Linear gain characteristics

ESCC qualified

Description

Flat-8

The 2ST3360K is a dual NPN and PNP bipolar transistor developed from ST’s Rad-

Hard high current density technology and housed in Flat-8 hermetic package.

Pin 4 and pin 5

are connected together to the seal ring and lid

Both NPN and PNP transistors offer linear and complementary behavior, fast

switching and best in class radiation hardness performance.

Specifically designed for aerospace applications and suitable for power MOSFET

driver and high peak output current applications, it is qualified in the ESCC system as

per 5207/009 specification.

In case of discrepancies between this datasheet and the relevant agency

specification, the latter takes precedence.

Product status link

2ST3360K

DS13734 - Rev 1 - May 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...13

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