生命周期: | Obsolete | 包装说明: | SUPER MINIMOLD, SC-70, 3 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.82 |
配置: | SINGLE | 最大漏极电流 (ID): | 0.02 A |
FET 技术: | JUNCTION | 最大反馈电容 (Crss): | 0.9 pF |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK853-K7 | RENESAS |
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SMALL SIGNAL, FET | |
2SK853-T1-AT | RENESAS |
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Switching N-Channel Power Mosfet, SSP, /Embossed Tape | |
2SK853-T2K4 | NEC |
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Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK853-T2K6 | NEC |
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Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK853-T2K7 | NEC |
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Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK854 | NEC |
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FAST SWITCHING N-CHANNEL SILICON POWER MOS FET | |
2SK855 | NEC |
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FAST SWITCHING N CHANNEL SILICON POWER MOSFET | |
2SK856 | TOSHIBA |
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2SK856 | |
2SK858 | TOSHIBA |
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TRANSISTOR 2 A, 600 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK859 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9A I(D) | TO-247VAR |