是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.89 | FET 技术: | JUNCTION |
最高工作温度: | 150 °C | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.15 W |
子类别: | Other Transistors | 表面贴装: | YES |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK853K6 | NEC |
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Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK853-K6 | RENESAS |
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SMALL SIGNAL, FET | |
2SK853K7 | NEC |
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Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK853-K7 | RENESAS |
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SMALL SIGNAL, FET | |
2SK853-T1-AT | RENESAS |
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Switching N-Channel Power Mosfet, SSP, /Embossed Tape | |
2SK853-T2K4 | NEC |
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Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK853-T2K6 | NEC |
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Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK853-T2K7 | NEC |
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Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK854 | NEC |
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FAST SWITCHING N-CHANNEL SILICON POWER MOS FET | |
2SK855 | NEC |
获取价格 |
FAST SWITCHING N CHANNEL SILICON POWER MOSFET |