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2SK596 PDF预览

2SK596

更新时间: 2024-10-15 18:09:59
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3页 430K
描述
Silicon Junction FET

2SK596 数据手册

 浏览型号2SK596的Datasheet PDF文件第2页浏览型号2SK596的Datasheet PDF文件第3页 
SMD Type  
JFET  
N-Channel Junction Silicon FET  
2SK596  
SOT-23  
Unit : mm  
+0.1  
2.9  
0.4  
-0.1  
+0.1  
-0.1  
Ƶ Features  
3
ƽ Excellent Voltage characteristic.  
ƽ
ƽ
Excellent transient characteristic.  
Adoption of FBET process.  
1
2
+0.1  
+0.05  
-0.01  
0.95  
-0.1  
0.1  
+0.1  
-0.1  
1.9  
1. Drain  
2. Source  
3. Gate  
Ƶ Absolute Maximum Ratings (  
TA  
= 25ć unless otherwise noted)  
Parameter  
Gate to Drain voltage  
Gate current  
Symbo
l  
Value  
-20  
10  
Unit  
V
V
DS  
IG  
mA  
mW  
ć
Drain current  
ID  
1
Total Power Dissipation  
Junction Temperature  
Storage Temperature Range  
P
D
100  
150  
TJ  
T
stg  
-55 to 150  
Ƶ Electrical Characteristics (  
TA  
= 25
ć
unless ot
herwise noted)  
Parameter  
Gate to Drain Breakdown Voltage  
Cutoff Voltage  
Symbol  
Test Conditions  
Min  
-20  
Typ  
-0.6  
Max  
Unit  
V
V
GD0  
GS(off)  
DSS  
I
G
=-100ȝA  
V
V
V
V
DS=5V,I  
D
=1ȝA  
-1.5  
800  
Zero Gate Voltage Drain Current  
Forward Transconductance  
Input Capacitance  
I
DS=5V, VGS=0V  
100  
0.4  
μA  
|Yfs  
|
DS=5V, VGS=0, f=1.0MHz  
1.2  
3.5  
0.65  
-3  
mS  
CISS  
V
DS=5V,VGS=0V,f=1.0MHz  
pF  
Output Capacitance  
COSS  
Voltage Gain  
GV  
V
V
in=10mV, f=1kHz  
dB  
Reduced Voltage characteristic  
Frequency characteristic  
Input Resistance  
ƸG  
ƸGVF  
in  
V
in=10mV,f=1kHz Vcc=4.5V to1.5V  
-1.2  
-3.5  
-1  
f=1kHz to 110Hz  
f=1kHz  
Z
25  
1
M  
Output Resistance  
Zo  
f=1kHz  
700  
Total Harmonic Distortion  
Output Noise Voltage  
THD  
V
V
in=30mV,f=1kHz  
in=0  
%
V
NO  
-110  
dB  
Ƶ Classification of IDSS (μA)  
A
B
C
D
E
100-170  
150-240  
210-350  
320-480  
440-800  
Marking: J35  
1
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