Datasheet > 2SK4068-01

2SK4068-01

更新时间： 2024-10-15 17:02:11

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	432K
描述
TO-247

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2SK4068-01 数据手册

http://www.fujielectric.co.jp/products/semiconductor/index.html

2SK4068-01

FUJI POWER MOSFET

Automotive

Trench Power MOSFET (2^ndGen.) series

N-Channel enhancement mode power MOSFET

■Features

■Outline Drawings [mm]

■Equivalent circuit schematic

Low on-state resistance

Low switching loss

100% avalanche tested

Drain (D)

Gate (G)

■Applications

Source (S)

Automotive switching applications

■Absolute Maximum Ratings at Tc=25℃(unless otherwise specified)

Description

Symbol

V_DS

V_DSX

I_D

Characteristics

Unit

Remarks

V_GS=-20V

Drain-Source Voltage

Continuous Drain Current

±70

Pulsed Drain Current

I_DP

±280

+30/-20

100

Gate-Source Voltage

V_GS

I_AS

Non-Repetitive Maximum Avalanche current

Non-Repetitive Maximum Avalanche Energy

Maximum Power Dissipation

Note*1

Note*2

E_AS

P_D

249.6

115

℃

T_ch

150

Operating and Storage Temperature range

T_stg

-55 to +150

Note*1 : Tch≦150℃,See Fig.1 and Fig.2

Note*2 : Starting Tch=25℃,L=51μH,V_CC=24V,RG=50Ω,See Fig.1 and Fig.2

E_ASlimited by maximum channel temperature and avalanche current.

See to Avalanche Energy graph of page 4

■Electrical Characteristics at Tc=25℃(unless otherwise specified)

Static Ratings

Description

Symbol

BV_DSS

Conditions

Min.

Typ.

Max.

Unit

I_D=1mA

V_GS=0V

2.0

－

Drain-Source Breakdown Voltage

I_D=1mA

BV_DSX

－

3.0

－

V_GS=-20V

I_D=10mA

V_DS= V_GS

Gate Threshold Voltage

V_GS(th)

4.0

100

500

100

6.0

Ta=25℃

V_DS= 40V

V_GS=0V

Zero Gate Voltage Drain current

I_DSS

μA

Ta=125℃

－

5.0

V_GS=+30V/-20V

V_DS= 0V

Gate-Source Leakage current

I_GSS

－

I_D=35A

Drain-Source On-State Resistance

R_DS(on)

－

mΩ

V_GS=10V

Jul. 2013

12 3 4 5 6 7 8

中文翻译

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