2SK3933-01L,S,SJ
N-CHANNEL SILICON POWER MOSFET
200406
Outline Drawings (mm)
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breakdown
Avalanche-proof
Low on-resistance
Low driving power
See to P4
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Item
Symbol
Ratings
500
Unit
V
Remarks
Drain-source voltage
VDS
VDSX
ID
500
V
VGS=-30V
Continuous Drain Current
Pulsed Drain Current
11
A
ID(puls]
VGS
IAR
±44
A
Gate(G)
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
±30
V
Source(S)
11
A
Note *1
Note *2
EAS
453.9
mJ
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
=
Maximum Avalanche Energy
Repetitive
Note *2:StartingTch=25°C,IAS=4.4A,L=43mH,
EAR
16.5
mJ
Note *3
VCC=50V,RG=50Ω
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
EAS limited by maximum channel temperature
and Avalanche current.
dVDS/dt
dV/dt
PD
20
5
kV/µs
<
VDS 500V
=
kV/µs Note *4
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
165
1.67
+150
Tc=25°C
Ta=25°C
W
Operating and Storage
Temperature range
Tch
°C
°C
Tstg
-55 to +150
<
<
<
Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS,Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
BVDSS
VGS(th)
Item
Test Conditions
µ
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
ID= 250 A
VGS=0V
VDS=VGS
500
3.0
µ
V
ID= 250 A
5.0
µA
Tch=25°C
VDS=500V VGS=0V
25
Zero Gate Voltage Drain Current
IDSS
µA
Tch=125°C
VDS=400V VGS=0V
250
IGSS
RDS(on)
gfs
VGS=±30V
VDS=0V
ID=5.5A VGS=10V
nA
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
10
100
Ω
S
0.57
9.0
950
130
6.0
16
6.0
33
5.5
0.70
ID=5.5A VDS=25V
VDS=25V
4.5
Ciss
Coss
Crss
td(on)
tr
pF
1425
195
9.0
24
9.0
50
8.3
Output Capacitance
VGS=0V
Reverse Transfer Capacitance
Turn-On Time ton
f=1MH
ns
VCC=300V ID=5.5A
VGS=10V
td(off)
tf
Turn-Off Time toff
RGS=10 Ω
QG
nC
Total Gate Charge
VCC=250V
ID=11A
25
10
38
15
12
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
VGS=10V
8.0
1.10
650
5.5
V
IF=11A VGS=0V Tch=25°C
IF=11A VGS=0V
-di/dt=100A/µs
Tch=25°C
1.50
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
trr
Qrr
ns
µC
Thermal characteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max. Units
0.758 °C/W
Thermal resistance
°C/W
75
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