生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.95 |
风险等级: | 5.71 | Is Samacsys: | N |
雪崩能效等级(Eas): | 453.9 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.7 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 44 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3933-01S | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3933-01SJ | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3934 | TOSHIBA |
获取价格 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) | |
2SK3934_06 | TOSHIBA |
获取价格 |
Silicon N-Channel MOS Type Switching Regulator Applications | |
2SK3934_09 | TOSHIBA |
获取价格 |
Switching Regulator Applications | |
2SK3935 | TOSHIBA |
获取价格 |
Silicon N-Channel MOS Type Switching Regulator Applications | |
2SK3935_09 | TOSHIBA |
获取价格 |
Switching Regulator Applications | |
2SK3936 | TOSHIBA |
获取价格 |
Silicon N-Channel MOS Type Switching Regulator Applications | |
2SK3936(Q) | TOSHIBA |
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MOSFET N-CH 500V 23A SC-65 | |
2SK3936_09 | TOSHIBA |
获取价格 |
Switching Regulator Applications |