Datasheet > 2SK3740

2SK3740

更新时间： 2024-11-07 06:23:15

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科信 - KEXIN		/
页数	文件大小	规格书
1页	44K
描述
MOS Field Effect Transistor

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中文翻译

获取价格

数据手册

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2SK3740 数据手册

SMD Type

MOSFET

MOS Field Effect Transistor

2SK3740

TO-263

Unit: mm

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Features

Gate voltage rating: 30 V

Low on-state resistance

R^DS(on)= 160 mÙ MAX. (VGS = 10 V, ID = 10 A)

Low gate charge

+0.1

-0.1

0.1max

1.27

+0.1

0.81

-0.1

Q^G= 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A)

Surface mount package available

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

250

Gate to source voltage

Drain current

I^dp*

1.5

Power dissipation

T^A=25

T^C=25

P^D

100

Channel temperature

Storage temperature

T^ch

150

Tstg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Symbol

I^DSS

Testconditons

Min

Typ

Max

Unit

Drain cut-off current

VDS=250V,VGS=0

VGS= 30V,VDS=0

VDS=10V,ID=1mA

VDS=10V,ID=10A

VGS=10V,ID=10A

Gate leakage current

I^GSS

Gate cut off voltage

V^GS(off)

2.5

7.0

3.5

4.5

Forward transfer admittance

Drain to source on-state resistance

Yfs

R^DS(on)

0.12 0.16

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C^iss

C^oss

C^rss

t^on

1720

330

170

V^DS=10V,VGS=0,f=1MHZ

t^r

I^D=10A,VGS(on)=10V,RG=0 ,VDD=125V

Turn-off delay time

Fall time

t^off

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q^G

Q^GS

Q^GD

V^DD= 200V

V^GS= 10 V

I^D=20A

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