2SK373
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK373
For Audio, High Voltage Amplifier and Constant Current
Applications
Unit: mm
•
•
High breakdown voltage: V
= −100 V (min)
GDS
High input impedance: I
= −1.0 nA (max) (V
= −80 V)
GSS
GS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Symbol
Rating
Unit
V
−100
10
V
GDS
Gate current
I
mA
mW
°C
G
Drain power dissipation
Junction temperature
Storage temperature range
P
400
D
T
j
125
T
stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
TO-92
SC-43
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
TOSHIBA
2-5F1C
Weight: 0.21 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= −80 V, V
= 0
⎯
⎯
⎯
−1.0
nA
V
GSS
GS
DS
DS
Gate-drain breakdown voltage
V
= 0, I = −100 μA
−100
⎯
(BR) GDS
G
I
DSS
(Note)
Drain current
V
= 10 V, V
= 0
0.6
⎯
6.5
mA
DS
GS
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
V
V
V
V
V
V
= 10 V, I = 0.1 μA
−0.4
1.5
⎯
⎯
4.6
13
3
−3.5
⎯
V
GS (OFF)
⎪Y ⎪
DS
DS
DS
DG
DS
D
= 10 V, V
= 10 V, V
= 0, f = 1 kHz
= 0, f = 1 MHz
mS
pF
pF
fs
GS
GS
C
⎯
iss
rss
Reverse transfer capacitance
C
= 10 V, I = 0, f = 1 MHz
⎯
⎯
D
= 10 V, V
= 0, R = 100 kΩ,
G
GS
Noise figure
NF
⎯
0.5
⎯
dB
f = 100 Hz
Note: I
classification O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
DSS
1
2007-11-01