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2SK373-GR PDF预览

2SK373-GR

更新时间: 2024-01-11 09:27:37
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器晶体管
页数 文件大小 规格书
4页 141K
描述
TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, 2-5F1C, SC-43, 3 PIN, FET General Purpose Small Signal

2SK373-GR 技术参数

生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:5.29配置:SINGLE
FET 技术:JUNCTIONJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SK373-GR 数据手册

 浏览型号2SK373-GR的Datasheet PDF文件第2页浏览型号2SK373-GR的Datasheet PDF文件第3页浏览型号2SK373-GR的Datasheet PDF文件第4页 
                                                        
                                                        
                                                                     
                                                                     
2SK373  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK373  
For Audio, High Voltage Amplifier and Constant Current  
Applications  
Unit: mm  
·
·
High breakdown voltage: V = −100 V (min)  
GDS  
High input impedance: I  
= −1.0 nA (max) (V  
GS  
= 80 V)  
GSS  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Gate-drain voltage  
V
-100  
10  
V
GDS  
Gate current  
I
mA  
mW  
°C  
G
Drain power dissipation  
Junction temperature  
Storage temperature range  
P
400  
125  
D
T
j
T
-55~125  
°C  
stg  
JEDEC  
JEITA  
TO-92  
SC-43  
TOSHIBA  
2-5F1C  
Weight: 0.21 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate cut-off current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
= -80 V, V = 0  
¾
¾
¾
-1.0  
nA  
V
GSS  
GS  
DS  
DS  
Gate-drain breakdown voltage  
V
V
= 0, I = -100 mA  
-100  
¾
(BR) GDS  
G
I
DSS  
Drain current  
V
= 10 V, V  
= 0  
GS  
0.6  
¾
6.5  
mA  
DS  
(Note)  
Gate-source cut-off voltage  
Forward transfer admittance  
Input capacitance  
V
V
V
V
V
= 10 V, I = 0.1 mA  
-0.4  
1.5  
¾
¾
4.6  
13  
3
-3.5  
¾
V
GS (OFF)  
DS  
DS  
DS  
DG  
DS  
D
ïY ï  
fs  
= 10 V, V  
= 10 V, V  
= 0, f = 1 kHz  
= 0, f = 1 MHz  
mS  
pF  
pF  
GS  
GS  
C
¾
iss  
rss  
Reverse transfer capacitance  
C
= 10 V, I = 0, f = 1 MHz  
¾
¾
D
= 10 V, V  
= 0, R = 100 kW,  
G
GS  
Noise figure  
NF  
¾
0.5  
¾
dB  
f = 100 Hz  
Note: I  
classification O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA  
DSS  
1
2003-03-26  

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