2SK369
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK369
For Low Noise Audio Amplifier Applications
Unit: mm
•
•
•
•
Suitable for use as first stage for equalizer and MC head amplifiers.
High |Y |: |Y | = 40 mS (typ.) (V = 10 V, V = 0, I = 5 mA)
fs
fs
DS
GS
DSS
High breakdown voltage: V
= −40 V (min)
GDS
Super low noise: NF = 1.0dB (typ.)
(V
DS
= 10 V, I = 5 mA, f = 1 kHz, R = 100 Ω)
D
G
•
High input impedance: I
= −1 nA (max) (V
= −30 V)
GSS
GS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Symbol
Rating
Unit
V
−40
10
V
GDS
Gate current
I
mA
mW
°C
G
Drain power dissipation
Junction temperature
Storage temperature range
P
400
D
T
j
125
T
stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
TO-92
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= −30 V, V
= 0
⎯
⎯
⎯
−1.0
nA
V
GSS
GS
DS
DS
Gate-drain breakdown voltage
V
= 0, I = −100 μA
−40
⎯
(BR) GDS
G
I
DSS
Drain current
V
= 10 V, V
= 0
5.0
⎯
30
mA
DS
DS
GS
(Note 1)
Gate-source cut-off voltage
Forward transfer admittance
V
V
V
= 10 V, I = 0.1 μA
−0.3
⎯
−1.2
V
GS (OFF)
D
= 10 V, V
= 5 mA)
= 0, f = 1 kHz,
= 0, f = 1 MHz
DS
GS
⎪Y ⎪
fs
25
40
⎯
mS
(I
DSS
Input capacitance
C
V
V
V
= 10 V, V
⎯
⎯
75
15
⎯
⎯
pF
pF
iss
DS
GD
DS
GS
Reverse transfer capacitance
C
= −10 V, I = 0, f = 1 MHz
D
rss
= 10 V, R = 100 Ω, I = 5 mA,
G
D
NF (1)
NF (2)
⎯
⎯
5
1
10
2
f = 100 Hz
Noise figure
(Note 2)
dB
V
= 10 V, R = 100 Ω, I = 5 mA,
DS
f = 1 kHz
G
D
Note 1:
I
classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA
DSS
Note 2: Use this in the low voltage region (VDS < 15 V) for low noise applications.
1
2007-11-01