FUJI POWER MOSFET
2SK3687-01MR
200509
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings [mm]
Features
TO-220F
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
600
600
±16
±64
±30
16
Unit
V
Remarks
Drain-source voltage
V
VGS=-30V
VDSX
ID
A
Continuous drain current
Pulsed drain current
Equivalent circuit schematic
A
ID(puls]
VGS
V
Gate-source voltage
<
A
Tch 150°C
=
Drain(D)
Repetitive or non-repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
IAR
mJ
kV/μs
kV/μs
W
*1
<
EAS
242.7
20
VDS 600V
=
dVDS/dt
dV/dt
PD
*2
5
2.16
°C
°C
Ta=25
Gate(G)
97
Tc=25
Source(S)
Operating and storage
temperature range
Isolation voltage
Tch
+150
°C
Tstg
VISO
-55 to +150 °C
kVrms
t=60sec, f=60Hz
2
*1 L=1.74mH, Vcc=60V, See to Avalanche Energy Graph
<
<
<
*2 IF -ID, -di/dt=50A/μs, Vcc BVDSS, Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
μ
Drain-source breakdown voltage
Gate threshold voltage
600
3.0
V
ID= 250 A
VGS=0V
VDS=VGS
μ
5.0
25
V
ID= 250 A
μA
VDS=600V VGS=0V
Tch=25°C
Zero gate voltage drain current
IDSS
250
100
Tch=125°C
VDS=480V VGS=0V
VGS=±30V
VDS=0V
ID=8A VGS=10V
ID=8A VDS=25V
VDS=25V
IGSS
RDS(on)
gfs
10
0.42
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
0.57
Ω
S
6.5
13
1590
200
11
Ciss
2390
300
17
pF
Coss
Crss
td(on)
tr
Output capacitance
VGS=0V
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=300V ID=8A
ns
29
43.5
16
24
87
12
51
18
15
VGS=10V
58
td(off)
tf
Turn-off time toff
RGS=10 Ω
8
34
QG
nC
Total Gate Charge
VCC=300V
ID=16A
12
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
10
VGS=10V
16
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=1.74mH Tch=25°C
1.00
1.50
VSD
trr
Qrr
V
IF=16A VGS=0V Tch=25°C
IF=16A VGS=0V
0.68
7.8
μs
μC
-di/dt=100A/μs
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
1.289
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
58.0
°C/W
http://www.fujielectric.co.jp/fdt/scd/
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