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2SK363_07

更新时间： 2024-02-09 03:43:29
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器开关音频放大器
页数 文件大小 规格书
5页 694K
描述
Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications

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中文翻译

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2SK363_07 数据手册

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2SK363  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK363  
For Audio Amplifier, Analog Switch, Constant Current  
and Impedance Converter Applications  
Unit: mm  
•
•
•
High breakdown voltage: V  
= −40 V  
GDS  
High input impedance: I  
= −1.0 nA (max) (V  
= −30 V)  
GSS  
GS  
Low R  
: R  
= 20 Ω (typ.) (I  
= 15 mA)  
DS (ON) DS (ON)  
DSS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Gate-drain voltage  
Symbol  
Rating  
Unit  
V
−40  
10  
V
GDS  
Gate current  
I
mA  
mW  
°C  
G
Drain power dissipation  
Junction temperature  
Storage temperature range  
P
400  
D
T
j
125  
T
stg  
−55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TO-92  
SC-43  
TOSHIBA  
2-5F1D  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Weight: 0.21 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate cut-off current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
= −30 V, V  
= 0  
⎯
⎯
⎯
−1.0  
nA  
V
GSS  
GS  
DS  
DS  
Gate-drain breakdown voltage  
V
= 0, I = −100 μA  
−40  
⎯
(BR) GDS  
G
I
DSS  
Drain current  
V
= 10 V, V  
= 0  
5.0  
⎯
30  
mA  
DS  
GS  
(Note 1)  
Gate-source cut-off voltage  
Forward transfer admittance  
Input capacitance  
V
V
V
V
V
V
= 10 V, I = 0.1 μA  
−0.3  
25  
⎯
⎯
60  
75  
15  
20  
−1.2  
⎯
V
mS  
pF  
pF  
Ω
GS (OFF)  
⎪Y ⎪  
DS  
DS  
DS  
GD  
DS  
D
= 10 V, V  
= 10 V, V  
= 0, f = 1 kHz (Note 2)  
= 0, f = 1 MHz  
fs  
GS  
GS  
C
⎯
iss  
rss  
Reverse transfer capacitance  
Drain-source ON resistance  
C
= −10 V, I = 0, f = 1 MHz  
⎯
⎯
D
R
= 10 mV, V  
= 0  
GS  
(Note 2)  
⎯
⎯
DS (ON)  
Note 1:  
I
classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA  
DSS  
Note 2: Condition of the typical value I  
= 15 mA  
DSS  
1
2007-11-01  
12345

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