生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.69 |
雪崩能效等级(Eas): | 242 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (ID): | 16 A | 最大漏源导通电阻: | 0.46 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 115 W | 最大脉冲漏极电流 (IDM): | 64 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3581-01SJ | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK3582MFV-A | TOSHIBA |
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TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, 3 PIN, FET General Purpose | |
2SK3582MFV-B | TOSHIBA |
获取价格 |
暂无描述 | |
2SK3582TK | TOSHIBA |
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Field Effect Transistor Silicon N Channel Junction Type For ECM | |
2SK3582TK-A | TOSHIBA |
获取价格 |
TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FE | |
2SK3582TK-B | TOSHIBA |
获取价格 |
TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FE | |
2SK3582TV | TOSHIBA |
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Silicon N Channel Junction Type For ECM | |
2SK3582TV-A | TOSHIBA |
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TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1H1A, VESM2, 3 PIN, FET General P | |
2SK3582TV-B | TOSHIBA |
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TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1H1A, VESM2, 3 PIN, FET General P | |
2SK3585G | PANASONIC |
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Small Signal Field-Effect Transistor, 0.00046A I(D), 1-Element, N-Channel, Silicon, Juncti |