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2SK3518-01MR PDF预览

2SK3518-01MR

更新时间: 2024-09-24 07:32:35
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富士电机 - FUJI /
页数 文件大小 规格书
4页 111K
描述
N-CHANNEL SILICON POWER MOSFET

2SK3518-01MR 数据手册

 浏览型号2SK3518-01MR的Datasheet PDF文件第2页浏览型号2SK3518-01MR的Datasheet PDF文件第3页浏览型号2SK3518-01MR的Datasheet PDF文件第4页 
FUJI POWER MOSFET200303  
2SK3518-01MR  
Super FAP-G Series  
Features  
N-CHANNEL SILICON POWER MOSFET  
Outline Drawings [mm]  
TO-220F  
High speed switching  
Low on-resistance  
No secondary breadown  
Low driving power  
Avalanche-proof  
Applications  
Switching regulators  
UPS (Uninterruptible Power Supply)  
DC-DCconverters  
Maximum ratings and characteristicAbsolute maximum ratings  
(Tc=25°C unless otherwise specified)  
Item  
Symbol  
VDS  
Ratings  
500  
Unit  
V
Drain-source voltage  
Continuous drain current  
Pulsed drain current  
Gate-source voltage  
Repetitive or non-repetitive  
Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
Max. power dissipation  
ID  
±6  
±24  
±30  
6
A
ID(puls]  
VGS  
A
Equivalent circuit schematic  
V
IAR  
*2  
*1  
A
Drain(D)  
EAS  
115  
20  
mJ  
kV/µs  
kV/µs  
W
dVDS/dt *4  
dV/dt  
*3  
5
°C  
°C  
PD Ta=25  
Tc=25  
Tch  
2.16  
Gate(G)  
32  
+150  
Operating and storage  
temperature range  
Isolation Voltage  
°C  
Source(S)  
-55 to +150  
2
Tstg  
°C  
VISO  
*5  
kVrms  
<
*1 L=5.90mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch 150°C  
=
<
<
<
<
*4 VDS 500V *5 t=60sec, f=60Hz  
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C  
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)  
Min.  
Typ.  
Max. Units  
Symbol  
V(BR)DSS  
VGS(th)  
Item  
Test Conditions  
µ
Drain-source breakdown voltaget  
Gate threshold voltage  
ID= 250 A  
VGS=0V  
VDS=VGS  
500  
V
µ
ID= 250 A  
3.0  
5.0  
25  
V
µA  
Tch=25°C  
VDS=500V VGS=0V  
Zero gate voltage drain current  
IDSS  
Tch=125°C  
250  
100  
VDS=400V VGS=0V  
VGS=±30V  
VDS=0V  
ID=3A VGS=10V  
IGSS  
RDS(on)  
gfs  
10  
nA  
Gate-source leakage current  
Drain-source on-state resistance  
Forward transcondutance  
Input capacitance  
1.15  
1.50  
2.5  
5
430  
60  
S
ID=3A VDS=25V  
VDS=25V  
Ciss  
675  
90  
pF  
Coss  
Crss  
td(on)  
tr  
Output capacitance  
VGS=0V  
2.5  
4.5  
15  
7.5  
30  
7.5  
Reverse transfer capacitance  
Turn-on time ton  
f=1MHz  
VCC=300V ID=3A  
ns  
10  
5
VGS=10V  
20  
5
td(off)  
tf  
Turn-off time toff  
RGS=10  
15  
22.5  
10.5  
4.5  
QG  
nC  
Total Gate Charge  
VCC=250V  
ID=6A  
6.5  
QGS  
QGD  
IAV  
Gate-Source Charge  
Gate-Drain Charge  
2.5  
VGS=10V  
6
A
Avalanche capability  
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
L=5.9mH Tch=25°C  
1.00  
0.5  
1.50  
VSD  
trr  
Qrr  
V
IF=6A VGS=0V Tch=25°C  
IF=6A VGS=0V  
-di/dt=100A/µs  
Tch=25°C  
µs  
µC  
1.7  
Thermalcharacteristics  
Item  
Min.  
Typ.  
Max. Units  
Symbol  
Test Conditions  
Rth(ch-c)  
channel to case  
3.91  
°C/W  
Thermal resistance  
Rth(ch-a)  
channel to ambient  
58.0  
°C/W  
1

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