FUJI POWER MOSFET200303
2SK3518-01MR
Super FAP-G Series
Features
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
500
Unit
V
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
ID
±6
±24
±30
6
A
ID(puls]
VGS
A
Equivalent circuit schematic
V
IAR
*2
*1
A
Drain(D)
EAS
115
20
mJ
kV/µs
kV/µs
W
dVDS/dt *4
dV/dt
*3
5
°C
°C
PD Ta=25
Tc=25
Tch
2.16
Gate(G)
32
+150
Operating and storage
temperature range
Isolation Voltage
°C
Source(S)
-55 to +150
2
Tstg
°C
VISO
*5
kVrms
<
*1 L=5.90mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch 150°C
=
<
<
<
<
*4 VDS 500V *5 t=60sec, f=60Hz
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
µ
Drain-source breakdown voltaget
Gate threshold voltage
ID= 250 A
VGS=0V
VDS=VGS
500
V
µ
ID= 250 A
3.0
5.0
25
V
µA
Tch=25°C
VDS=500V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
VDS=400V VGS=0V
VGS=±30V
VDS=0V
ID=3A VGS=10V
IGSS
RDS(on)
gfs
10
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
1.15
1.50
Ω
2.5
5
430
60
S
ID=3A VDS=25V
VDS=25V
Ciss
675
90
pF
Coss
Crss
td(on)
tr
Output capacitance
VGS=0V
2.5
4.5
15
7.5
30
7.5
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=300V ID=3A
ns
10
5
VGS=10V
20
5
td(off)
tf
Turn-off time toff
RGS=10 Ω
15
22.5
10.5
4.5
QG
nC
Total Gate Charge
VCC=250V
ID=6A
6.5
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
2.5
VGS=10V
6
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=5.9mH Tch=25°C
1.00
0.5
1.50
VSD
trr
Qrr
V
IF=6A VGS=0V Tch=25°C
IF=6A VGS=0V
-di/dt=100A/µs
Tch=25°C
µs
µC
1.7
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
3.91
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
58.0
°C/W
1