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2SK3482

更新时间: 2024-11-12 06:23:35
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关
页数 文件大小 规格书
1页 47K
描述
MOS Field Effect Transistor

2SK3482 数据手册

  
SMD Type  
MOSFET  
MOS Field Effect Transistor  
2SK3482  
TO-252  
Unit: mm  
Features  
+0.15  
-0.15  
+0.1  
2.30  
-0.1  
6.50  
+0.2  
5.30  
-0.2  
+0.8  
0.50  
-0.7  
Super low on-state resistance:  
RDS(on)1 = 33m MAX. (VGS = 10 V, ID = 18A)  
RDS(on)2 = 39 m MAX. (VGS = 4.5 V, ID = 18A)  
Low Ciss: Ciss = 3600 pF TYP.  
0.127  
max  
+0.1  
0.80  
-0.1  
+0.1  
0.60  
-0.1  
2.3  
4.60  
1 Gate  
+0.15  
-0.15  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
100  
Gate to source voltage  
V
20  
A
36  
100  
Drain current  
Idp *  
A
50  
Power dissipation  
TC=25  
TA=25  
PD  
W
1.0  
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to +150  
* PW 10 s,Duty Cycle 1%  
Electrical Characteristics Ta = 25  
Parameter  
Drain cut-off current  
Gate leakage current  
Gat cutoff voltage  
Symbol  
IDSS  
IGSS  
VGS(off)  
Yfs  
Testconditons  
Min  
Typ  
Max  
10  
Unit  
A
VDS=100V,VGS=0  
VGS= 20V,VDS=0  
VDS=10V,ID=1mA  
VDS=10V,ID=18A  
VGS=10V,ID=18A  
VGS=4.5V,ID=18A  
10  
A
1.5  
12  
2.0  
23  
2.5  
V
Forward transfer admittance  
S
RDS(on)1  
RDS(on)2  
Ciss  
27  
33  
39  
m
Drain to source on-state resistance  
29  
m
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
3600  
360  
190  
15  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
VDS=10V,VGS=0,f=1MHZ  
Coss  
Crss  
ton  
tr  
10  
ID=18A,VGS(on)=10V,RG=0 ,VDD=50V  
Turn-off delay time  
Fall time  
toff  
68  
tf  
6
Total Gate Charge  
Gate to Source Charge  
Gate to Drain Charge  
QG  
72  
ID =36A, VDD =80V, VGS = 10 V  
QGS  
QGD  
10  
19  
1
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